公开(公告)号：US07515049B2

公开(公告)日：2009-04-07

申请号：US11449084

申请日：2006-06-08

申请人： Arun Sharma ,  Daniel Fritschen ,  Daniel Liu ,  Norma Riley

发明人： Arun Sharma ,  Daniel Fritschen ,  Daniel Liu ,  Norma Riley

IPC分类号： G08B13/14

CPC分类号： G06K7/0008 ,  G06K7/10178

摘要： The present invention generally comprises an apparatus that allows an RFID antenna to obtain information from an RFID tag mounted on a container. The apparatus reproduces the RF field generated by the antenna to a location proximate to the RFID tag. In one embodiment, the apparatus comprises a pickup device and a reproduction device electrically coupled with the pickup device. In another embodiment, the apparatus comprises at least one magnetic rod, which creates a magnetic path for the RF field to travel between the antenna and the RFID tag. In another embodiment, the apparatus comprises a pickup antenna and a reproduction antenna for transmitting the RF signal from the antenna proximate to the RFID tag.

摘要翻译： 本发明通常包括允许RFID天线从安装在容器上的RFID标签获取信息的装置。 该装置将由天线产生的RF场再现到靠近RFID标签的位置。 在一个实施例中，该装置包括拾取装置和与拾取装置电耦合的再现装置。 在另一个实施例中，该装置包括至少一个磁棒，其产生用于RF场在天线和RFID标签之间行进的磁路。 在另一个实施例中，该装置包括拾取天线和用于从靠近RFID标签的天线发送RF信号的再现天线。

公开(公告)号：US5916369A

公开(公告)日：1999-06-29

申请号：US485058

申请日：1995-06-07

申请人： Roger N. Anderson ,  Peter W. Hey ,  David K. Carlson ,  Mahalingam Venkatesan ,  Norma Riley

发明人： Roger N. Anderson ,  Peter W. Hey ,  David K. Carlson ,  Mahalingam Venkatesan ,  Norma Riley

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C30B25/14 ,  C23C16/00

CPC分类号： C23C16/45504 ,  C23C16/455 ,  C23C16/45514 ,  C23C16/45561 ,  C23C16/481 ,  C30B25/14

摘要： A system of supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to together define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.

摘要翻译： 向具有壁的基板处理装置供给处理流体的系统，其内表面限定了处理室，基板支撑基座位于该处理室中。 该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。 入口具有与沿其形成的每个流体管道相对应的单独的流体通道。 每个流体通道在壁的内表面处或附近开口以一起限定流体混合区域，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直到到达混合区域。

公开(公告)号：US5855677A

公开(公告)日：1999-01-05

申请号：US831797

申请日：1997-04-08

申请人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

发明人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

IPC分类号： C23C16/44 ,  C23C16/48 ,  C23C16/52 ,  H01L21/00

CPC分类号： C23C16/4405 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  Y10S438/905

摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.

摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。

公开(公告)号：US06489241B1

公开(公告)日：2002-12-03

申请号：US09399443

申请日：1999-09-17

申请人： Anna Lena Thilderkvist ,  Paul Comita ,  Lance Scudder ,  Norma Riley

发明人： Anna Lena Thilderkvist ,  Paul Comita ,  Lance Scudder ,  Norma Riley

IPC分类号： H01L21302

CPC分类号： H01L21/02046 ,  C23C16/0236 ,  C30B29/06 ,  C30B33/12 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67115 ,  H01L21/67155 ,  H01L21/76254 ,  Y10S438/964 ,  Y10S438/977

摘要： A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.

摘要翻译： 一种平滑形成在基底上的硅表面的方法。 根据本发明，将具有硅表面的基板放置在室中并加热到1000°-1300℃之间的温度。当将基板加热到1000°-1300℃之间的温度时，硅表面 在室内暴露于包含H 2和HCl的气体混合物中以使硅表面平滑。

公开(公告)号：US5322567A

公开(公告)日：1994-06-21

申请号：US782147

申请日：1991-10-24

申请人： Paul L. Deaton ,  Norma Riley ,  James V. Rinnovatore

发明人： Paul L. Deaton ,  Norma Riley ,  James V. Rinnovatore

IPC分类号： H01L21/205 ,  C23C16/44 ,  C30B25/14 ,  H01L21/285 ,  H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4412 ,  C30B25/14

摘要： In an epitaxial reactor system using a vacuum pump which is connected to the reaction chamber by an exhaust line, particulate contaminants normally deposit in the exhaust line near its juncture with the reaction chamber. When the vacuum pump is isolated from the reaction chamber during a back-filling operation, these contaminants can be entrained in the currents of gas normally produced in the back-filling operation. A removable baffle device having the shape of a truncated cone and including a wafer catching device that holds a disk shaped particulate baffle member is placed in the exhaust line at its juncture with the reaction chamber to prevent these particles from re-entering the reaction chamber.

摘要翻译： 在使用通过排气管连接到反应室的真空泵的外延反应器系统中，微粒污染物通常在与反应室接合处的排气管中沉积。 当在后填充操作期间真空泵与反应室隔离时，这些污染物可能被夹带在通常在回填操作中产生的气体的电流中。 具有截头圆锥形状并且包括保持盘形颗粒挡板构件的晶片捕获装置的可移除挡板装置在其与反应室的接合处放置在排气管线中，以防止这些颗粒再次进入反应室。

公开(公告)号：US5298107A

公开(公告)日：1994-03-29

申请号：US843987

申请日：1992-02-27

申请人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

发明人： Lance A. Scudder ,  Norma Riley ,  Jon M. Schalla

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/12

CPC分类号： C23C16/4588 ,  C30B25/12

摘要： A technique for impeding the formation of mechanical bonds between workpieces, such as semiconductor wafers, and a carrier or susceptor on which they are supported during a deposition or layer formation process, such as in epitaxial processing. In the formation of relatively thick films, greater than approximately 50 microns (50 .mu.m) thick, wafers can become mechanically bonded to the susceptor on which they are supported, and are subject to damage caused by thermal stresses during a cooldown phase of processing. In the disclosed method, the speed or direction of rotation of a rotatable susceptor is abruptly changed at least once, or periodically during processing. Slight movement of the wafers with respect to the susceptor during each rotation speed change or reversal tends to break any bonds before they can develop strength, and production yields of acceptable wafers are significantly improved.

摘要翻译： 阻止在诸如半导体晶片的工件之间形成机械结合的技术，以及在沉积或层形成过程（例如外延加工）期间它们被支撑在其上的载体或基座。 在形成相对较厚的膜时，大于约50微米（50（μm））厚的晶片可以机械地结合到它们所支撑的基座上，并且在冷却阶段期间受到热应力的损害 处理。 在所公开的方法中，旋转基座的转速或转动方向突然改变至少一次，或在处理期间周期性地改变。 在每个转速变化或反转期间，晶片相对于基座的轻微运动在它们可以发展强度之前倾向于破坏任何键，并且可接受的晶片的生产率显着提高。

公开(公告)号：US20070285253A1

公开(公告)日：2007-12-13

申请号：US11449084

申请日：2006-06-08

申请人： Arun Sharma ,  Daniel Fritschen ,  Daniel Liu ,  Norma Riley

发明人： Arun Sharma ,  Daniel Fritschen ,  Daniel Liu ,  Norma Riley

IPC分类号： G08B13/14 ,  G08B1/08

CPC分类号： G06K7/0008 ,  G06K7/10178

摘要： The present invention generally comprises an apparatus that allows an RFID antenna to obtain information from an RFID tag mounted on a container. The apparatus reproduces the RF field generated by the antenna to a location proximate to the RFID tag. In one embodiment, the apparatus comprises a pickup device and a reproduction device electrically coupled with the pickup device. In another embodiment, the apparatus comprises at least one magnetic rod, which creates a magnetic path for the RF field to travel between the antenna and the RFID tag. In another embodiment, the apparatus comprises a pickup antenna and a reproduction antenna for transmitting the RF signal from the antenna proximate to the RFID tag.

摘要翻译： 本发明通常包括允许RFID天线从安装在容器上的RFID标签获取信息的装置。 该装置将由天线产生的RF场再现到靠近RFID标签的位置。 在一个实施例中，该装置包括拾取装置和与拾取装置电耦合的再现装置。 在另一个实施例中，该装置包括至少一个磁棒，其产生用于RF场在天线和RFID标签之间行进的磁路。 在另一个实施例中，该装置包括拾取天线和用于从靠近RFID标签的天线发送RF信号的再现天线。

公开(公告)号：US6083323A

公开(公告)日：2000-07-04

申请号：US5311

申请日：1998-01-09

申请人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

发明人： David K. Carlson ,  Norma Riley ,  Roger N. Anderson

IPC分类号： C23C16/44 ,  C23C16/48 ,  C23C16/52 ,  H01L21/00 ,  B08B5/00 ,  B08B9/00

CPC分类号： C23C16/4405 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67248 ,  Y10S438/905

摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.

摘要翻译： 一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。 目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。 该装置包含用于测量室壁温度的温度测量装置。 将测量的温度与预定的目标温度进行比较。 闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。 空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。 护罩形成支撑并包围反应室的壳体的一部分。

公开(公告)号：US5198071A

公开(公告)日：1993-03-30

申请号：US797614

申请日：1991-11-25

申请人： Lance Scudder ,  Norma Riley

发明人： Lance Scudder ,  Norma Riley

IPC分类号： C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  C30B25/02 ,  C30B33/00 ,  H01L21/205

CPC分类号： C30B29/06 ,  C23C16/02 ,  C23C16/24 ,  C23C16/56 ,  C30B25/02 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  Y10S148/017 ,  Y10S148/024

摘要： A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the formation of such an epitaxial layer thereon. In one aspect, such thermal stress is inhibited during the deposition of the epitaxial material by initially reducing the deposition rate to less than 1 .mu.m per minute or lower until the epitaxial layer reaches a thickness of from about 2 to about 30 .mu.m. In another aspect of the invention, any bridge materials formed between the wafer and the wafer support, during formation of the epitaxial layer, is removed before the wafer is cooled, i.e., before such bridge materials can induce thermal stress in the wafer during the cooling of the wafer, by post etching the wafer with HCl etching gas after the epitaxial deposition.

摘要翻译： 描述了在半导体晶片上形成外延层的工艺，其中在其形成这样的外延层期间，其抑制了硅晶片等半导体晶片中的热应力的形成。 在一个方面，通过将沉积速率初始降低到小于1微米/分钟或更低直到外延层达到约2至约30微米的厚度，在沉积外延材料期间，这种热应力被抑制。 在本发明的另一方面，在形成外延层期间在晶片和晶片支撑件之间形成的任何桥接材料在晶片被冷却之前被移除，即在这种桥接材料可以在冷却期间在晶片中引起热应力之前 通过在外延沉积之后用HCl蚀刻气体后蚀刻晶片。

公开(公告)号：US07780392B2

公开(公告)日：2010-08-24

申请号：US11588962

申请日：2006-10-27

申请人： Theodore W. Rogers ,  Norma Riley

发明人： Theodore W. Rogers ,  Norma Riley

IPC分类号： B65G1/00

CPC分类号： H01L21/67769 ,  Y10S414/14

摘要： The present invention comprises a stocker. The stocker comprises multiple container storage locations arranged in a horizontal array. The horizontal array of storage locations may be suspended from the facility ceiling or supported by the facility floor. The stocker may include one or more stocker robots for transporting a workpiece container within the stocker and/or to a material transport system. The stocker may also include features such as container elevators and conveyor loops.

摘要翻译： 本发明包括储料器。 储料器包括以水平阵列布置的多个容器储存位置。 存储位置的水平阵列可以从设施顶棚悬挂或由设施楼层支撑。 储料器可以包括一个或多个储料器机器人，用于将储存器内的工件容器和/或物料输送系统运送。 储料器还可以包括诸如集装箱电梯和输送机回路的特征。