MEMORY INTERFACE TO BRIDGE MEMORY BUSES
    1.
    发明申请
    MEMORY INTERFACE TO BRIDGE MEMORY BUSES 有权
    内存接口到桥接记忆总线

    公开(公告)号:US20070121389A1

    公开(公告)日:2007-05-31

    申请号:US11277650

    申请日:2006-03-28

    IPC分类号: G11C7/10 G06F12/00

    CPC分类号: G11C5/066 G11C5/04 H05K1/181

    摘要: A memory interface to bridge a parallel memory bus and a serial memory bus. One embodiment includes a printed circuit board, comprising: at least one memory interface buffer chip to connect a memory controller of core logic and an advanced memory buffer (AMB). The memory controller has a memory interface for a parallel memory bus.

    摘要翻译: 用于桥接并行存储器总线和串行存储器总线的存储器接口。 一个实施例包括印刷电路板,包括:用于连接核心逻辑的存储器控​​制器和高级存储器缓冲器(AMB)的至少一个存储器接口缓冲芯片。 存储器控制器具有用于并行存储器总线的存储器接口。

    Memory interface to bridge memory buses
    2.
    发明授权
    Memory interface to bridge memory buses 有权
    内存接口桥接内存总线

    公开(公告)号:US07558124B2

    公开(公告)日:2009-07-07

    申请号:US11277650

    申请日:2006-03-28

    IPC分类号: G11C7/10

    CPC分类号: G11C5/066 G11C5/04 H05K1/181

    摘要: A memory interface to bridge a parallel memory bus and a serial memory bus. A printed circuit board includes at least one memory interface buffer chip to connect a memory controller of core logic and an advanced memory buffer (AMB). The memory controller has a memory interface for a parallel memory bus.

    摘要翻译: 用于桥接并行存储器总线和串行存储器总线的存储器接口。 印刷电路板包括至少一个用于连接核心逻辑的存储器控​​制器和高级存储器缓冲器(AMB)的存储器接口缓冲器芯片。 存储器控制器具有用于并行存储器总线的存储器接口。

    Registered DIMM memory system
    9.
    发明授权
    Registered DIMM memory system 有权
    注册DIMM内存系统

    公开(公告)号:US08654556B2

    公开(公告)日:2014-02-18

    申请号:US12185239

    申请日:2008-08-04

    IPC分类号: G11C5/02

    摘要: A Registered DIMM (RDIMM) system with reduced electrical loading on the data bus for increases memory capacity and operation frequency. In one embodiment, the data bus is buffered on the DIMM. In another embodiment, the data bus is selectively coupled to a group of memory chips via switches.

    摘要翻译: 一种注册DIMM(RDIMM)系统,在数据总线上减少了电力负载,从而提高了存储容量和运行频率。 在一个实施例中,数据总线被缓冲在DIMM上。 在另一个实施例中,数据总线经由开关选择性地耦合到一组存储器芯片。

    Method for generating read enable signal and memory system using the method
    10.
    发明授权
    Method for generating read enable signal and memory system using the method 有权
    使用该方法生成读启动信号和存储系统的方法

    公开(公告)号:US07983100B2

    公开(公告)日:2011-07-19

    申请号:US12544602

    申请日:2009-08-20

    申请人: Gang Shan Larry Wu

    发明人: Gang Shan Larry Wu

    IPC分类号: G11C7/00

    CPC分类号: G11C7/1051 G11C7/1066

    摘要: A method for generating a read enable signal which is for controlling reading of a pair of data strobe signals and a data signal in a memory system is provided. The method comprises: detecting whether the pair of data strobe signals are both high or low; and generating the read enable signal if the pair of data strobe signals are detected being both high or low. Because the read enable signal is generated using the pair of strobe signals, DLL can be turned off, thus the power consumption of the memory system can be reduced. In addition, the read enable signal is self-aligned with a certain point of the pair of strobe signals, this may enhance precision of the transmission of the pair of strobe signals and the data signal.

    摘要翻译: 提供了一种用于产生读使能信号的方法,用于控制一对数据选通信号的读取和存储系统中的数据信号。 该方法包括:检测一对数据选通信号是高还是低; 以及如果检测到所述一对数据选通信号为高或低,则产生所述读使能信号。 由于读使能信号是使用一对选通信号产生的,所以可以关闭DLL,从而能够降低存储器系统的功耗。 此外,读使能信号与一对选通信号的某一点自对准,这可以提高一对选通信号和数据信号的传输精度。