Method for trimming a planar capacitor
    1.
    发明授权
    Method for trimming a planar capacitor 失效
    平面电容器修整方法

    公开(公告)号:US4924064A

    公开(公告)日:1990-05-08

    申请号:US291225

    申请日:1988-12-28

    IPC分类号: H01G4/33 B23K26/00 H01G4/255

    CPC分类号: H01G4/255 B23K26/351

    摘要: This invention concerns a method for trimming a planar capacitor. According to the method, a laser emission is focused to an electrode of a capacitor formed on a substrate transparent to laser emission and including of an upper electrode, an insulation layer, and a lower electrode, in order to achieve a passivation effect on the electrode. The laser emission is focused according to the invention locally onto the lower electrode through the substrate in order to achieve a heating effect on the lower electrode, thereby oxidizing the electrode material so that the lower electrode is locally converted into an electrically nonconductive state while being protected by the substrate and the insulation layer. The trimming method in accordance with the invention is accurate and offers a stable capacitance value.

    摘要翻译: 本发明涉及一种用于修整平面电容器的方法。 根据该方法,激光发射被聚焦到形成在对激光发射透明并且包括上电极,绝缘层和下电极的基板上的电容器的电极,以便实现对电极的钝化效果 。 根据本发明,激光发射通过基板局部聚焦到下电极上,以便对下电极实现加热效果,从而氧化电极材料,使得下电极在被保护的同时被局部转换成非导电状态 通过基板和绝缘层。 根据本发明的修整方法是准确的并且提供稳定的电容值。