公开(公告)号：US06737848B2

公开(公告)日：2004-05-18

申请号：US10294120

申请日：2002-11-14

申请人： Laszlo Goetz ,  Stefan Reithmaier ,  Kevin Scoones

发明人： Laszlo Goetz ,  Stefan Reithmaier ,  Kevin Scoones

IPC分类号： G05F316

CPC分类号： G05F3/22

摘要： The invention relates to a reference voltage source including a bipolar transistor having a base, a collector and an emitter electrode. The reference voltage source further comprises a Schottky diode (D) whose anode is connected to the base electrode of the bipolar transistor and whose cathode is connected to the collector electrode of the bipolar transistor. The currents flowing through the Schottky diode and bipolar transistor are each set so that a temperature-independent reference voltage (VREF) materializes at the collector electrode of the bipolar transistor.

摘要翻译： 本发明涉及一种包括具有基极，集电极和发射极的双极晶体管的参考电压源。 参考电压源还包括其阳极连接到双极晶体管的基极并且其阴极连接到双极晶体管的集电极的肖特基二极管（D）。 流过肖特基二极管和双极晶体管的电流各自被设定为使得独立于温度的参考电压（VREF）在双极晶体管的集电极处实现。

公开(公告)号：US06492847B1

公开(公告)日：2002-12-10

申请号：US09689078

申请日：2000-10-12

申请人： Laszlo Goetz ,  Stefan Reithmaier ,  Martin Rommel

发明人： Laszlo Goetz ,  Stefan Reithmaier ,  Martin Rommel

IPC分类号： H03B100

CPC分类号： H03K19/0013 ,  H03K5/133

摘要： A digital driver circuit with one or more CMOS inverters intended as input stages, whereby for the MOS FETs of the inverters the channel width/length (W/L) ratio increases from stage to stage. The digital driver circuit includes an intermediate stage with two further CMOS inverters, connected between a supply voltage Vcc and ground. The driver circuit also includes an output stage having two MOS FETs with the drain terminals of both the MOS FETs of the output stage connected both to each other and to the output of the circuit, the W/L ratio of both MOS FETs exceeding that of the MOS FETs of the intermediate stage. The switch-over of the two MOS FETs of the output stage, occurring with changes of the digital input signal at the input of the circuit, is offset in time with respect to each other, thereby reducing current peaks.

摘要翻译： 具有一个或多个CMOS反相器的数字驱动器电路，用作输入级，由此对于反相器的MOS FET，沟道宽度/长度（W / L）比从阶段增加到阶段。 数字驱动器电路包括一个中间级，其中两个另外的CMOS反相器连接在电源电压Vcc和地之间。 驱动器电路还包括具有两个MOS FET的输出级，其输出级的两个MOS FET的漏极端子彼此连接，并连接到电路的输出端，两个MOS FET的W / L比超过 中间阶段的MOS FET。 随着电路输入端的数字输入信号的变化而发生的输出级的两个MOS FET的切换在时间上相对于彼此偏移，从而减小电流峰值。

公开(公告)号：US5570008A

公开(公告)日：1996-10-29

申请号：US227427

申请日：1994-04-14

申请人： Laszlo Goetz

发明人： Laszlo Goetz

IPC分类号： G05F3/30 ,  G05F3/20

CPC分类号： G05F3/30 ,  Y10S323/907

摘要： For compensating the Early effect a band gap reference voltage source includes current mirror circuits (T.sub.4, Q.sub.3 and T.sub.1, Q.sub.1 as well as T.sub.2, Q.sub.2) to ensure that the currents necessary for achieving the temperature-compensated output voltage are generated. Using the current mirror circuits makes the reference voltage source independent of changes in the supply voltage (U.sub.cc) and enables it in particular to be employed at supply voltages as of low as 3 V.

摘要翻译： 为了补偿早期效应，带隙参考电压源包括电流镜电路（T4，Q3和T1，Q1以及T2，Q2），以确保产生实现温度补偿输出电压所需的电流。 使用电流镜电路使得参考电压源不依赖于电源电压（Ucc）的变化，并使其特别适用于低至3V的电源电压。