公开(公告)号：US12278180B2

公开(公告)日：2025-04-15

申请号：US17506821

申请日：2021-10-21

Applicant: Lodestar Licensing Group LLC

Inventor： Harsh Narendrakumar Jain ,  Shuangqiang Luo

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/762 ,  H01L23/522 ,  H01L23/528 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27

Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers having channel-material strings therein. Conductive vias are formed through insulating material that is directly above the channel-material strings. Individual of the conductive vias are directly electrically coupled to individual of the channel-material strings. After forming the conductive vias, horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Intervening material is formed in the trenches laterally-between and longitudinally-along the immediately-laterally-adjacent memory-block regions. Additional methods and structures independent of method are disclosed.