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公开(公告)号:US12089403B2
公开(公告)日:2024-09-10
申请号:US17590266
申请日:2022-02-01
Applicant: Lodestar Licensing Group LLC
Inventor: M. Jared Barclay , Merri L. Carlson , Saurabh Keshav , George Matamis , Young Joon Moon , Kunal R. Parekh , Paolo Tessariol , Vinayak Shamanna
IPC: H10B41/27 , H01L21/311 , H10B41/10 , H10B43/10 , H10B43/27
CPC classification number: H10B41/27 , H01L21/31144 , H10B41/10 , H10B43/10 , H10B43/27
Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a construction comprising a stack that have vertically-alternating insulative tiers and wordline tiers. An array of openings is formed in an uppermost portion of upper material that is above the stack, and the openings comprise channel openings and dummy openings. At least the uppermost portion of the upper material is used as a mask while etching the channel openings and the dummy openings into a lower portion of the upper material. The channel openings are etched into the insulative and wordline tiers. The channel openings are etched deeper into the construction than the dummy openings, and channel material is formed in the channel openings after the etching. Structures independent of method are disclosed.