公开(公告)号：US07892879B2

公开(公告)日：2011-02-22

申请号：US11628871

申请日：2005-08-01

申请人： Louise Buckle ,  John W Cairns ,  Jean Giess ,  Neil T Gordon ,  Andrew Graham ,  Janet E Hails ,  David J Hall ,  Colin J Hollier ,  Graham J Pryce ,  Andrew J Wright

发明人： Louise Buckle ,  John W Cairns ,  Jean Giess ,  Neil T Gordon ,  Andrew Graham ,  Janet E Hails ,  David J Hall ,  Colin J Hollier ,  Graham J Pryce ,  Andrew J Wright

IPC分类号： H01L29/22

CPC分类号： C30B25/183 ,  C30B23/02 ,  C30B25/02 ,  C30B29/48 ,  H01L27/14696 ,  H01L31/1832 ,  H01L31/1836 ,  Y02E10/50

摘要： This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

摘要翻译： 本发明涉及在图案化硅上制造碲化汞碲化镉（CMT），特别涉及带有集成电路的硅衬底上的CMT生长。 本发明的方法包括通过首先通过MBE生长一个或多个缓冲层，然后通过MOVPE生长CMT，在硅衬底上选择的生长窗中生长CMT。 生长窗口可以通过掩蔽生长窗口之外的区域来定义。 生长窗内的生长是结晶的，而在生长窗外部的生长是多晶的并且可以通过蚀刻去除。 本发明提供了一种在集成电路上直接生长CMT结构的方法，从而消除了对杂交的需要。

公开(公告)号：US08021914B2

公开(公告)日：2011-09-20

申请号：US10594393

申请日：2005-04-05

申请人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

发明人： Janet E Hails ,  Jean Giess ,  John W Cairns ,  Andrew Graham ,  Louise Buckle ,  David J Hall ,  Neil T Gordon

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B23/02 ,  C30B29/46 ,  H01L31/1032 ,  H01L31/1832

摘要： A method of manufacture of cadmium mercury telluride (CMT) is disclosed. The method involves growing one or more buffer layers on a substrate by molecular beam epitaxy (MBE). Subsequently at least one layer of cadmium mercury telluride, Hg1-xCdxTe where x is between 0 and 1 inclusive, is grown by metal organic vapour phase epitaxy (MOVPE). The use of MBE to grow buffer layers allows a range of substrates to be used for CMT growth. The MBE buffer layers provide the correct orientation for later MOVPE growth of CMT and also prevent chemical contamination of the CMT and attack of the substrate during MOVPE. The method also allows for device processing of the CMT layers to be performed with further MOVPE growth of crystalline CMT layers and/or passivation layers. The invention also relates to new devices formed by the method.

摘要翻译： 公开了一种制造碲化汞镉（CMT）的方法。 该方法包括通过分子束外延（MBE）在衬底上生长一个或多个缓冲层。 随后，通过金属有机气相外延（MOVPE）生长至少一层碲化汞镉Hg（其中x在0和1之间）在0和1之间的Hg1-xCdxTe。 使用MBE来生长缓冲层可以使一系列底物用于CMT生长。 MBE缓冲层为CMT的后续MOVPE生长提供了正确的方向，并且还防止了在MOVPE期间CMT的化学污染和基材的侵蚀。 该方法还允许通过结晶CMT层和/或钝化层的进一步MOVPE生长来执行CMT层的器件处理。 本发明还涉及通过该方法形成的新装置。