Sealing for OLED devices
    1.
    发明授权
    Sealing for OLED devices 有权
    OLED器件密封

    公开(公告)号:US06933537B2

    公开(公告)日:2005-08-23

    申请号:US09968164

    申请日:2001-09-28

    CPC分类号: H01L51/5246 H01L51/524

    摘要: Disclosed is a technique for increasing the shelf life of devices, such as OLED which requires hermetic sealing from moisture and oxygen with out increasing the bonding width. In one embodiment, the permeation path of moisture or oxygen is increased without increasing the bonding width. This is achieved by using a grooved interface between the cap and substrate on which the components of the device are formed. The grooved interface can comprise various geometric shapes.

    摘要翻译: 公开了一种用于增加诸如OLED的器件的保质期的技术,其需要通过增加接合宽度而从湿气和氧气密封。 在一个实施方案中,水分或氧气的渗透路径增加而不增加粘合宽度。 这通过使用在其上形成有器件的部件的帽和衬底之间的开槽界面来实现。 带槽的接口可以包括各种几何形状。

    Procedure for encapsulation of electronic devices
    4.
    发明授权
    Procedure for encapsulation of electronic devices 有权
    电子设备封装程序

    公开(公告)号:US06803245B2

    公开(公告)日:2004-10-12

    申请号:US09968567

    申请日:2001-09-28

    IPC分类号: H01L2100

    CPC分类号: H01L21/50 H01L51/5246

    摘要: An encapsulation procedure for an organic light emitting diode (OLED) device, especially for thin and therefore flexible substrates, is disclosed. The device is sealed hermetically against environmental and mechanical damage. The procedure includes the use of a thin cover lid holder and a substrate holder that are designed to handle thin substrates without damaging them. Thin substrates ensure sufficient mechanical flexibility for the OLED devices, and provides an overall thickness of less than 0.5 mm.

    摘要翻译: 公开了一种用于有机发光二极管(OLED)器件的封装程序,特别是对于薄且因此柔性的衬底。 该装置密封,防止环境和机械损坏。 该方法包括使用薄的盖盖保持器和衬底保持器,其被设计成处理薄的衬底而不损坏它们。 薄的基板确保OLED器件具有足够的机械灵活性,并提供小于0.5mm的总体厚度。

    Barrier stack
    5.
    发明授权
    Barrier stack 失效
    障碍堆叠

    公开(公告)号:US06737753B2

    公开(公告)日:2004-05-18

    申请号:US09968189

    申请日:2001-09-28

    IPC分类号: H01L2348

    摘要: A barrier stack for sealing devices is described. The barrier stack includes at least first and second base layers bonded together with a high barrier adhesive. A base layer includes a flexible support coated on at least one major surface with a barrier layer. The adhesive advantageously seals defects, such as pinholes in the barrier layer, thus improving the barrier properties.

    摘要翻译: 描述了用于密封装置的阻挡层叠体。 阻挡层包括至少第一和第二基层与高阻隔粘合剂结合在一起。 基层包括涂覆在具有阻挡层的至少一个主表面上的柔性载体。 粘合剂有利地密封缺陷,例如阻挡层中的针孔,从而改善阻隔性能。

    Organic electronic devices with an encapsulation
    6.
    发明授权
    Organic electronic devices with an encapsulation 有权
    有机电子器件具有封装

    公开(公告)号:US08344360B2

    公开(公告)日:2013-01-01

    申请号:US09968167

    申请日:2001-09-28

    IPC分类号: H01L35/24

    摘要: An encapsulation for an organic light emitting diode (OLED) device is disclosed. The encapsulation includes a sealing dam surrounding the cell region of the OLED device to support a cap. Spacer particles are randomly located in the cell region to prevent the cap from contacting the active components, thereby protecting them from damage. The sealing dam provides a sealing region between the edge of the cap and dam in which an adhesive is applied to seal the OLED device. The use of the sealing dam advantageously enables devices to be formed with narrower sealing widths.

    摘要翻译: 公开了一种用于有机发光二极管(OLED)器件的封装。 封装包括围绕OLED器件的单元区域以密封盖的密封坝。 间隔粒子随机地位于细胞区域中,以防止帽与活性成分接触,从而保护帽免受损伤。 密封大坝在盖的边缘和坝之间提供密封区域,其中施加粘合剂以密封OLED装置。 密封坝的使用有利于使装置形成得更窄的密封宽度。

    Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer
    8.
    发明授权
    Buried hetero-structure InP-based opto-electronic device with native oxidized current blocking layer 失效
    具有原生氧化电流阻挡层的埋入异质结InP基光电器件

    公开(公告)号:US06287884B1

    公开(公告)日:2001-09-11

    申请号:US09234331

    申请日:1999-01-20

    IPC分类号: H01L2100

    摘要: A buried hetero-structure with native oxidized current blocking layer for InP-based opto-electronic devices comprises a InP semiconductor substrate, a buffer layer, a ridge mesa containing lower confinement layer, active layer and upper grating confinement layer, a first InP cladding layer and a native oxidized Al-bearing layer as current blocking layers at both lateral edges, a second InP cladding layer, contact layer, contact metal, and the second ridge mesa covered with insulating layer. This method is to facilitate the processing of conventional buried hetero-structure InP-based opto-electronic device and improve the performance under high temperature and high current operation.

    摘要翻译: 用于基于InP的光电器件的具有天然氧化电流阻挡层的掩埋异质结构包括InP半导体衬底,缓冲层,含有下约束层的脊台面,有源层和上光栅约束层,第一InP包层 并且在两个侧边缘处具有作为电流阻挡层的天然氧化的Al承载层,第二InP包覆层,接触层,接触金属和覆盖有绝缘层的第二脊台面。 这种方法是为了便于处理传统的埋入异质结InP型光电器件,提高了高温高电流运行时的性能。