公开(公告)号：US07898833B2

公开(公告)日：2011-03-01

申请号：US12269918

申请日：2008-11-13

申请人： Lucian Prejbeanu ,  Cécile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

发明人： Lucian Prejbeanu ,  Cécile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

IPC分类号： G11C15/02

CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10

摘要： A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the “trapped layer,” the magnetization of which is in a fixed direction, and a magnetic storage layer called the “free layer” having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.

摘要翻译： 一种具有使用场或自旋转移的热辅助写入的磁性元件，包括被称为被捕获层的磁性参考层，其磁化在固定的方向，以及称为“自由层 “具有可变的磁化方向，并由由铁磁材料制成的层组成，在层的平面内具有磁化，并且磁耦合到由反铁磁材料制成的磁化捕获层。 具有限制电流路径的半导体或绝缘层被夹在参考层和存储层之间。 在与半导体接触的铁磁层之间的存储层中设置至少一个双层，其分别由非晶或准非晶材料构成，以及具有与反铁磁性层相同结构或相同晶格的材料， 具有限流路径的绝缘层和反铁磁层。