公开(公告)号：US08609439B2

公开(公告)日：2013-12-17

申请号：US13348996

申请日：2012-01-12

Applicant: Ioan Lucian Prejbeanu ,  Ricardo Sousa

Inventor： Ioan Lucian Prejbeanu ,  Ricardo Sousa

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

Abstract: The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.

Abstract translation: 本公开涉及包括磁隧道结的存储器件，其包括在具有固定取向的第一磁化的第一铁磁层和具有可自由取向的第二磁化的第二铁磁层之间的隧道势垒层，以及具有基本上 垂直于第一和第二磁化; 第一和第二铁磁层被退火，使得磁性隧道结的隧道磁阻等于或大于约150％。 还公开了形成MRAM单元的方法。

公开(公告)号：US07898833B2

公开(公告)日：2011-03-01

申请号：US12269918

申请日：2008-11-13

Applicant: Lucian Prejbeanu ,  Cécile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

Inventor： Lucian Prejbeanu ,  Cécile Maunoury ,  Bernard Dieny ,  Clarisse Ducruet ,  Ricardo Sousa

IPC: G11C15/02

CPC classification number: G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10

Abstract: A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the “trapped layer,” the magnetization of which is in a fixed direction, and a magnetic storage layer called the “free layer” having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.

Abstract translation: 一种具有使用场或自旋转移的热辅助写入的磁性元件，包括被称为被捕获层的磁性参考层，其磁化在固定的方向，以及称为“自由层 “具有可变的磁化方向，并由由铁磁材料制成的层组成，在层的平面内具有磁化，并且磁耦合到由反铁磁材料制成的磁化捕获层。 具有限制电流路径的半导体或绝缘层被夹在参考层和存储层之间。 在与半导体接触的铁磁层之间的存储层中设置至少一个双层，其分别由非晶或准非晶材料构成，以及具有与反铁磁性层相同结构或相同晶格的材料， 具有限流路径的绝缘层和反铁磁层。

公开(公告)号：US20060291276A1

公开(公告)日：2006-12-28

申请号：US11483425

申请日：2006-07-07

Applicant: Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

Inventor： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C11/1675 ,  G11C11/5607

Abstract: The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.

Abstract translation: 本发明涉及以热辅助方式写入的磁存储器，每个存储点（40）由磁性隧道结组成，并且存储器的横截面平行于形成隧道结的层的平面为圆形或基本上 圆。 所述隧道结包括具有固定磁化方向的至少一个捕获层（44），具有可变磁化方向的自由层（42）和布置在所述自由层（42）和所述被俘获层之间的绝缘层（43） 44）。 根据本发明，自由层（42）由至少一个软磁层和捕获层（41）形成，所述两层通过接触磁耦合，并且选择读取存储器或休息存储器的工作温度 使其低于分别游离和捕获的层的阻挡温度。

公开(公告)号：US20060281258A1

公开(公告)日：2006-12-14

申请号：US10572906

申请日：2004-10-06

Applicant: Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

Inventor： Bernard Dieny ,  Ricardo Sousa ,  Dana Stanescu

IPC: H01L21/336 ,  H01L29/94

CPC classification number: H01L43/08 ,  G11C11/16

Abstract: The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5 W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (11), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (12) in the opposite direction.

Abstract translation: 该装置依次包括第一电极（12），磁参考层（1），隧道势垒（3），磁存储层（4）和第二电极（13）。 至少一个第一热障被布置在存储层（4）和第二电极（13）之间，并且由导热率低于5W / m /℃的材料形成。第二热障可以通过 布置在第一电极（12）和参考层（1）之间的层。 该方法的写入阶段包括通过隧道结从存储层（4）到参考层（1）的电流（11）的流动，而读取阶段包括电流（12）的流动 相反的方向。

公开(公告)号：US20130250671A1

公开(公告)日：2013-09-26

申请号：US13876390

申请日：2011-09-29

Applicant: Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

Inventor： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Abstract translation: 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

公开(公告)号：US07626221B2

公开(公告)日：2009-12-01

申请号：US11062926

申请日：2005-02-23

Applicant: Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

Inventor： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

IPC: H01L21/00

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

Abstract: The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

Abstract translation: 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。

公开(公告)号：US20080247072A1

公开(公告)日：2008-10-09

申请号：US12059869

申请日：2008-03-31

Applicant: Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

Inventor： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

IPC: G11B5/02

CPC classification number: G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

Abstract: This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

Abstract translation: 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

公开(公告)号：US20050195658A1

公开(公告)日：2005-09-08

申请号：US11062926

申请日：2005-02-23

Applicant: Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

Inventor： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

IPC: G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  G11C16/06

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

Abstract: The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

Abstract translation: 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。

公开(公告)号：US08947916B2

公开(公告)日：2015-02-03

申请号：US13876390

申请日：2011-09-29

Applicant: Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

Inventor： Bernard Dieny ,  Jerome Moritz ,  Ricardo Sousa

IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08

CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01F10/3218 ,  H01F10/3268 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Abstract translation: 一种热辅助磁写入装置，包括被称为“参考层”的第一磁性层，被称为呈现可变磁化方向的“存储层”的第二磁性层，位于参考层和存储层之间的间隔件，以及 第一反铁磁层与存储层接触，第一反铁磁层能够捕获存储层的磁化方向。 磁性装置还包括由铁磁材料制成的稳定层，稳定层与第一反铁磁层接触。

公开(公告)号：US07957181B2

公开(公告)日：2011-06-07

申请号：US12059869

申请日：2008-03-31

Applicant: Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

Inventor： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

IPC: G11C11/14

CPC classification number: G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

Abstract: This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

Abstract translation: 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。