公开(公告)号：US11194515B2

公开(公告)日：2021-12-07

申请号：US16571249

申请日：2019-09-16

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Ping-Hsien Lin ,  Wei-Chen Wang ,  Hsiang-Pang Li ,  Shu-Hsien Liao ,  Che-Wei Tsao ,  Yuan-Hao Chang ,  Tei-Wei Kuo

IPC: G06F3/06 ,  G11C16/10

Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.

公开(公告)号：US20190073136A1

公开(公告)日：2019-03-07

申请号：US15696325

申请日：2017-09-06

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Hung-Sheng Chang ,  Hsiang-Pang Li ,  Tse-Yuan Wang ,  Che-Wei Tsao ,  Yuan-Hao Chang ,  Tei-Wei Kuo

IPC: G06F3/06

Abstract: A memory controlling method, a memory controlling circuit and a memory system are provided. A memory includes a plurality of memory chips. The memory controlling method includes the following steps: The memory chips are grouped into at least two partner groups by a grouping unit. A quantity of the memory chips in each of the partner groups is at least two. At least one of the memory chips in each of the partner groups is required to serve a reading request or a writing request by a processing unit.