公开(公告)号：US20140264232A1

公开(公告)日：2014-09-18

申请号：US13895059

申请日：2013-05-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： FENG-MIN LEE ,  ERH-KUN LAI ,  WEI-CHIH CHIEN ,  MING-HSIU LEE ,  CHIH-CHIEH YU

IPC: H01L21/02 ,  H01L45/00

CPC classification number: H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/1633

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract translation: 描述了由辐射诱导的光酸辅助形成的原位氧化物形成的金属氧化物。 该方法包括将感光材料沉积在电极的金属表面上。 感光材料暴露于辐射（例如紫外光）时，诸如光酸产生剂的组分形成氧化反应物，例如导致金属在金属表面氧化的光酸。 作为氧化的结果，形成金属氧化物层。 然后可以去除感光材料，并且可以将元件的后续元件形成为与金属氧化物层接触。 金属氧化物可以通过过渡金属的氧化而成为过渡金属氧化物。 金属氧化物层可以作为可编程电阻存储单元中的存储元件来应用。 金属氧化物可以是可编程金属化电池的元件。

公开(公告)号：US20140119110A1

公开(公告)日：2014-05-01

申请号：US14148545

申请日：2014-01-06

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： HSIANG-LAN LUNG ,  MING-HSIU LEE ,  YEN-HAO SHIH ,  TIEN-YEN WANG ,  CHAO-I WU

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C11/5678 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0092

Abstract: An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit.

Abstract translation: 集成电路相变存储器可以通过在一些单元和存储器中引起第一电阻状态以及存储器中的第二电阻状态以及存储器中的一些其他单元来表示数据集而被预编码。 在对数据集进行编码之后，将集成电路相变存储器安装在基板上。 在安装集成电路相变存储器之后，通过感测第一和第二电阻状态以及将第一电阻状态下的单元改变为第三电阻状态并将第二电阻状态的单元改变为第四电阻状态来读取数据组。 第一和第二电阻状态在焊接或其他热循环过程之后保持感测裕度。 第三和第四电阻状态的特征在于能够使用更高速度和更低功率的转换，适用于电路的任务功能。