公开(公告)号：US20240395706A1

公开(公告)日：2024-11-28

申请号：US18323418

申请日：2023-05-25

Applicant: MACRONIX International Co., Ltd.

Inventor： Meng-Yen Wu

IPC: H01L23/528 ,  G11C5/06 ,  H01L23/522 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10 ,  H10B43/27 ,  H10B80/00

Abstract: A memory device includes a substrate and first to fourth tiers. The first tier is located on the substrate and includes first transistors and second transistors. The first transistors includes multiple groups. The second tier includes a composite stack structure. The third tier includes local bit lines and local source lines. Each of the local bit lines is connected to a first terminal of one of the first transistors. Each of the local source lines is connected to a first terminal of one of the second transistors. The fourth tier includes multiple global bit lines and a common source line. Each of the global bit lines is connected to second terminals of the first transistors in one of the groups. The common source line is connected to a second terminal of each of the second transistors. Embodiments of the present disclosure may be applied to a 3D AND flash memory.

公开(公告)号：US20230363160A1

公开(公告)日：2023-11-09

申请号：US17737771

申请日：2022-05-05

Applicant: MACRONIX International Co., Ltd.

Inventor： Meng-Yen Wu ,  Pi-Shan Tseng

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L23/528 ,  H01L23/522 ,  H01L23/04

CPC classification number: H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L23/5283 ,  H01L23/5226 ,  H01L23/04

Abstract: A memory device may be applicated in a 3D AND flash memory device. The memory device includes a dielectric substrate, a plurality of memory cells, a slit structure, and a middle section of a seal ring. The gate composite stack structure disposed on the dielectric substrate in a first region and a second region of the dielectric substrate. The plurality of memory cells disposed in the composite stack structure. The slit structure extends through the composite stack structure in first region. The composite stack structure is divided into a plurality of blocks. The middle section of a seal ring extends through the composite stack structure in the second region. The middle section of the seal ring includes a body part extending through the composite stack structure in the second region and a liner layer located between the body part and the composite stack structure.