公开(公告)号：US10204859B2

公开(公告)日：2019-02-12

申请号：US15415699

申请日：2017-01-25

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Min-Hsuan Huang

IPC: H01L23/52 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213 ,  H01L23/522

Abstract: An interconnect structure including a substrate and a conductive pattern is provided. The conductive pattern includes a bottom portion. The bottom portion of the conductive pattern is disposed on the substrate. The conductive pattern has a notch on each of two sidewalls of the bottom portion.

公开(公告)号：US20180211921A1

公开(公告)日：2018-07-26

申请号：US15415699

申请日：2017-01-25

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Min-Hsuan Huang

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768 ,  H01L21/3213

CPC classification number: H01L23/53238 ,  H01L21/32139 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76892 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/53295

Abstract: An interconnect structure including a substrate and a conductive pattern is provided. The conductive pattern includes a bottom portion. The bottom portion of the conductive pattern is disposed on the substrate. The conductive pattern has a notch on each of two sidewalls of the bottom portion.

公开(公告)号：US09922876B1

公开(公告)日：2018-03-20

申请号：US15414386

申请日：2017-01-24

Applicant: MACRONIX International Co., Ltd.

Inventor： Hong-Ji Lee ,  Min-Hsuan Huang

IPC: H01L23/52 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/76865 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53266

Abstract: An interconnect structure including a substrate, a dielectric layer, a first conductive pattern, and a second conductive pattern is provided. The dielectric layer is disposed on the substrate and has an opening. The first conductive pattern is disposed in the opening. The second conductive pattern is disposed on the first conductive pattern and exposes an exposed portion of the first conductive pattern. The exposed portion of the first conductive pattern has a notch.