公开(公告)号：US20160300761A1

公开(公告)日：2016-10-13

申请号：US14681988

申请日：2015-04-08

Applicant: MACRONIX International Co., Ltd.

Inventor： Xin-Guan Lin ,  Hong-Ji Lee

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/31111 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76805 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/53271

Abstract: A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.

Abstract translation: 提供一种制造半导体器件的方法。 介电层形成在阻挡层上。 在电介质层中形成第一开口并暴露阻挡层的一部分。 在第一开口的底部的阻挡层上形成保护层。 保护层在中心部分较厚，边缘部分较薄。 通过使用保护层作为掩模来去除暴露的阻挡层的一部分以形成第二开口。 第二开口具有邻近第二开口的侧壁设置在阻挡层中的至少一个子开口。 还提供了用该方法形成的半导体器件。

公开(公告)号：US09881809B2

公开(公告)日：2018-01-30

申请号：US14681988

申请日：2015-04-08

Applicant: MACRONIX International Co., Ltd.

Inventor： Xin-Guan Lin ,  Hong-Ji Lee

IPC: H01L23/48 ,  H01L21/311 ,  H01L21/3213 ,  H01L23/485 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L21/31111 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76805 ,  H01L23/485 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/53271

Abstract: A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.