公开(公告)号：US3748095A

公开(公告)日：1973-07-24

申请号：US3748095D

申请日：1968-06-17

Applicant: MC DONNELL DOUGLAS CORP

Inventor： HENDERSON J ,  JOHNSON D ,  MURAMOTO M

IPC: C01B19/00 ,  C01F17/00 ,  C22C1/00 ,  C30B11/00 ,  C22B59/00

CPC classification number: C22C1/007 ,  C01B19/007 ,  C01F17/0087 ,  C01P2006/34 ,  C01P2006/40 ,  C30B11/00 ,  C30B29/46

Abstract: Novel method for the production of high purity metal sulfides, selenides, tellurides, and arsenides, particularly those of high melting point greater than 1,000* C, e.g., such compounds of the rare earth metals. An anhydrous metal, metal salt, metal oxide or mixtures thereof is contacted with a gas mixture, e.g., H2S and CS2 at a high temperature, e.g., in the range of about 1,250* C to about 1,325* C, in the substantial absence of water vapor and oxygen until the product has been formed. The metal sulfides, tellurides, selenides, and arsenides thus produced are formed into single crystals which are useful as semi-conductors, transistors, etc.

Abstract translation: 用于生产高纯度金属硫化物，硒化物，碲化物和砷化物的新方法，特别是高于1000℃的高熔点金属，例如稀土金属化合物。 将无水金属，金属盐，金属氧化物或其混合物与气体混合物例如H 2 S和CS 2在高温（例如约1250℃至约1325℃）下接触，基本上不存在 水蒸汽和氧气直到产品形成。 由此产生的金属硫化物，碲化物，硒化物和砷化物形成为可用作半导体，晶体管等的单晶。