公开(公告)号：US20160099317A1

公开(公告)日：2016-04-07

申请号：US14958447

申请日：2015-12-03

申请人： MEARS TECHNOLOGIES, INC.

发明人： ROBERT MEARS ,  HIDEKI TAKEUCHI ,  ERWIN TRAUTMANN

IPC分类号： H01L29/15 ,  H01L29/06 ,  H01L29/78 ,  H01L29/165

CPC分类号： H01L29/152 ,  H01L21/324 ,  H01L21/823412 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0638 ,  H01L29/1054 ,  H01L29/1083 ,  H01L29/155 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

摘要： A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer may include a plurality of stacked groups of layers, with each group of layers of the superlattice punch-through layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Each fin may also include an upper semiconductor fin portion on the at least one superlattice punch-through layer and extending vertically upward therefrom. The semiconductor device may also include source and drain regions at opposing ends of the fins, and a gate overlying the fins.