SEMICONDUCTOR DEVICES WITH ENHANCED DETERMINISTIC DOPING AND RELATED METHODS
    1.
    发明申请
    SEMICONDUCTOR DEVICES WITH ENHANCED DETERMINISTIC DOPING AND RELATED METHODS 有权
    具有增强决定性掺杂的半导体器件及相关方法

    公开(公告)号:US20150357414A1

    公开(公告)日:2015-12-10

    申请号:US14734412

    申请日:2015-06-09

    发明人: Robert J. MEARS

    摘要: A method for making a semiconductor device may include forming a plurality of stacked groups of layers on a semiconductor substrate, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include implanting a dopant in the semiconductor substrate beneath the plurality of stacked groups of layers in at least one localized region, and performing an anneal of the plurality of stacked groups of layers and semiconductor substrate and with the plurality of stacked groups of layers vertically and horizontally constraining the dopant in the at least one localized region.

    摘要翻译: 制造半导体器件的方法可以包括在半导体衬底上形成多个堆叠的层组,其中每组层包括限定基底半导体部分的多个堆叠的基底半导体单层和限定在其中的至少一个非半导体单层 相邻的基底半导体部分的晶格。 该方法还可以包括在半导体衬底中的至少一个局部区域中的多个层叠组下方的半导体衬底内注入掺杂剂,并且执行多个层叠的层和半导体衬底组的退火, 垂直和水平地限制所述至少一个局部区域中的掺杂剂的层。