公开(公告)号：US20240379549A1

公开(公告)日：2024-11-14

申请号：US18638650

申请日：2024-04-17

Applicant: MEDIATEK INC.

Inventor： Shih-Chuan Chiu ,  Chia-Hsin Hu ,  Zheng Zeng

IPC: H01L23/528 ,  H01L29/417 ,  H01L29/66 ,  H01L29/861

Abstract: The present invention provides a semiconductor structure, wherein the semiconductor structure includes an oxide definition region, a plurality of metal gate structures and a plurality of S/D contacts. The oxide definition region is disposed over a semiconductor substrate and surrounded by insulating regions. The plurality of metal gate structures are disposed on an N-well or a P-well manufactured on the semiconductor substrate. The plurality of S/D contacts are disposed on the N-well or the P-well manufactured on the semiconductor substrate. In addition, the plurality of metal gate structures, the plurality of S/D contacts and the at least one dummy gate structure are within the oxide definition region.