公开(公告)号：US12237401B2

公开(公告)日：2025-02-25

申请号：US17821195

申请日：2022-08-22

Applicant: MEDIATEK Inc.

Inventor： Cheng-Tien Wan ,  Yao-Tsung Huang ,  Yun-San Huang ,  Ming-Cheng Lee ,  Wei-Che Huang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/417 ,  H01L29/78

Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.

公开(公告)号：US20240096860A1

公开(公告)日：2024-03-21

申请号：US18233863

申请日：2023-08-14

Applicant: MEDIATEK INC.

Inventor： Tai-Hao Peng ,  Yao-Tsung Huang

IPC: H01L25/10 ,  H01L23/498 ,  H01L25/16

CPC classification number: H01L25/105 ,  H01L23/49816 ,  H01L25/165 ,  H01L24/48 ,  H01L2225/1017 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1205 ,  H01L2924/1436

Abstract: A multi-die package on package includes a bottom package having a first device die and a second device die. A top package including a memory die is stacked on the bottom package.

公开(公告)号：US11450756B2

公开(公告)日：2022-09-20

申请号：US17001784

申请日：2020-08-25

Applicant: MEDIATEK Inc.

Inventor： Cheng-Tien Wan ,  Yao-Tsung Huang ,  Yun-San Huang ,  Ming-Cheng Lee ,  Wei-Che Huang

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.

公开(公告)号：US10790380B2

公开(公告)日：2020-09-29

申请号：US16121730

申请日：2018-09-05

Applicant: MEDIATEK Inc.

Inventor： Cheng-Tien Wan ,  Yao-Tsung Huang ,  Yun-San Huang ,  Ming-Cheng Lee ,  Wei-Che Huang

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/84 ,  H01L27/12 ,  H01L21/8238 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8234

Abstract: A semiconductor chip includes a substrate and a transistor. The transistor is formed on the substrate and includes an insulation layer and a fin. The fin includes a base portion and a protrusion connected with the base portion, wherein the protrusion is projected with respect to an upper surface of the base portion and has a recess recessed with respect to the upper surface.