公开(公告)号：US20220372622A1

公开(公告)日：2022-11-24

申请号：US17305209

申请日：2021-07-01

申请人： MELLANOX TECHNOLOGIES, LTD. ,  BAR-ILAN UNIVERSITY ,  RAMOT AT TEL-AVIV UNIVERSITY LTD. ,  SIMTAL NANO-COATINGS LTD

发明人： Elad Mentovich ,  Yaniv ROTEM ,  Yaakov GRIDISH ,  Doron NAVEH ,  Chen STERN ,  Yosi BEN-NAIM ,  Ariel ISMACH ,  Eran BAR-RABI ,  Tal KAUFMAN

IPC分类号： C23C16/455 ,  F15D1/06 ,  C23C16/46

摘要： A first and a second flange assembly configured for facilitating uniform and laminar flow in a system are provided. The first flange assembly includes a first flange body configured to introduce a gas into a chamber. The first flange assembly includes a plurality of outlet tubes disposed on an interior surface of the first flange body and a plurality of inlet tubes disposed on an exterior surface of the first flange body and in fluid communication with the plurality of outlet tubes. The second flange assembly includes a second flange body configured to remove the gas from the chamber. The second flange assembly includes a plurality of through holes extending from an interior surface to an exterior surface of the second flange body and a plurality of exit tubes extending from the exterior surface of the second flange body and in fluid communication with the plurality of through holes.

公开(公告)号：US20230002906A1

公开(公告)日：2023-01-05

申请号：US17305203

申请日：2021-07-01

申请人： MELLANOX TECHNOLOGIES, LTD. ,  BAR-ILAN UNIVERSITY ,  RAMOT AT TEL- AVIV UNIVERSITY LTD. ,  SIMTAL NANO-COATINGS LTD

发明人： Elad MENTOVICH ,  Yaniv ROTEM ,  Yaakov GRIDISH ,  Doron NAVEH ,  Chen STERN ,  Yosi BEN-NAIM ,  Ariel ISMACH ,  Eran BAR-RABI ,  Tal KAUFMAN

IPC分类号： C23C16/54 ,  C23C16/46 ,  C23C16/52

摘要： A continuous-feed chemical vapor deposition system and an associated method are provided. An example of the continuous-feed chemical vapor deposition system includes a first chamber configured to receive a substrate. The continuous-feed chemical vapor deposition system includes a second chamber downstream from the first chamber and configured to receive the substrate from the first chamber. The second chamber is configured to perform a chemical vapor deposition process on the substrate. The continuous-feed chemical vapor deposition system includes a third chamber downstream from the second chamber that is configured to receive the substrate from the second chamber upon completion of the chemical vapor deposition process. The second chamber can be environmentally isolated from the first chamber and the third chamber. The first chamber is further configured to receive a subsequent substrate when the chemical vapor deposition process is occurring in the second chamber.

公开(公告)号：US20220372621A1

公开(公告)日：2022-11-24

申请号：US17305206

申请日：2021-07-01

申请人： MELLANOX TECHNOLOGIES, LTD. ,  BAR-ILAN UNIVERSITY ,  RAMOT AT TEL-AVIV UNIVERSITY LTD. ,  SIMTAL NANO-COATINGS LTD

发明人： Elad MENTOVICH ,  Yaniv ROTEM ,  Yaakov GRIDISH ,  Doron NAVEH ,  Chen STERN ,  Yosi BEN-NAIM ,  Ariel ISMACH ,  Eran BAR-RABI ,  Tal KAUFMAN

IPC分类号： C23C16/458

摘要： A substrate carrier and a mechanism for moving the substrate carrier through a chemical vapor deposition system are provided. The substrate carrier includes a cylindrical housing having an interior surface. A plurality of plurality of shelves fixed to the interior surface, each shelf configured to support at least one substrate. The substrate carrier may include a connector configured to engage the substrate carrier with the mechanism. The mechanism may include a moveable arm and a motor configured to actuate the moveable arm. The moveable arm may include an actuating member connected to the motor and configured to move the moveable arm between a retracted state and an extended state. The moveable arm may be configured to operate in a chamber having a first pressure and a first temperature and the motor may be configured to operate in an environment having a second pressure.