EUV LITHOGRAPHY USING POLYMER CRYSTAL BASED RETICLE

    公开(公告)号:US20230123834A1

    公开(公告)日:2023-04-20

    申请号:US17961164

    申请日:2022-10-06

    Abstract: Embodiments of the present disclosure relate to a photomask. The photomask may include: a substrate; and one or more pixel units formed over the substrate. Each pixel unit may include: at least one polymer crystal element configured to interact with extreme ultraviolet (EUV) light based on an orientation of the polymer crystal element; and a plurality of electrodes configured to control the orientation of the polymer crystal element by applying voltage across the polymer crystal element. Each pixel unit is controlled by the respective plurality of electrodes independently, and the one or more pixel units generate a pattern for lithography upon exposure to the EUV light.

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