公开(公告)号：US09805801B1

公开(公告)日：2017-10-31

申请号：US15499119

申请日：2017-04-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yogesh Luthra ,  Kim-Fung Chan ,  Xiaojiang Guo

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/32

Abstract: Methods of operating a memory device during a programming operation, and memory devices so configured, including increasing a voltage applied to a selected access line from a first voltage while maintaining a voltage applied to an unselected access line at the first voltage. The selected access line is connected to a control gate of a target memory cell of a string of series-connected memory cells that is targeted for programming during the programming operation and the unselected access line is connected to a control gate of a second memory cell of the string of series-connected memory cells that is untargeted for programming during the programming operation. After the voltage applied to the selected access line reaches a second voltage, the methods further include increasing the voltage applied to the unselected access line from the first voltage while increasing the voltage applied to the selected access line from the second voltage.

公开(公告)号：US09779822B1

公开(公告)日：2017-10-03

申请号：US15499119

申请日：2017-04-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yogesh Luthra ,  Kim-Fung Chan ,  Xiaojiang Guo

IPC: G11C16/10 ,  G11C16/04

Abstract: Methods of operating a memory device during a programming operation, and memory devices so configured, including increasing a voltage applied to a selected access line from a first voltage while maintaining a voltage applied to an unselected access line at the first voltage. The selected access line is connected to a control gate of a target memory cell of a string of series-connected memory cells that is targeted for programming during the programming operation and the unselected access line is connected to a control gate of a second memory cell of the string of series-connected memory cells that is untargeted for programming during the programming operation. After the voltage applied to the selected access line reaches a second voltage, the methods further include increasing the voltage applied to the unselected access line from the first voltage while increasing the voltage applied to the selected access line from the second voltage.

公开(公告)号：US10163514B2

公开(公告)日：2018-12-25

申请号：US15692073

申请日：2017-08-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yogesh Luthra ,  Kim-Fung Chan ,  Xiaojiang Guo

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/32

Abstract: Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first voltage while applying the first voltage to a second access line, the first access line coupled to a target memory cell of the programming operation and an unselected memory cell not targeted for the programming operation, and the second access line coupled to memory cells not targeted for the programming operation. After increasing the voltage applied to the first access line, increasing the voltage applied to the first access line from the second voltage to a third voltage higher than the second voltage and increasing a voltage applied to the second access line from the first voltage to a fourth voltage higher than the first voltage and lower than the third voltage.

公开(公告)号：US20170365344A1

公开(公告)日：2017-12-21

申请号：US15692073

申请日：2017-08-31

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yogesh Luthra ,  Kim-Fung Chan ,  Xiaojiang Guo

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/32

Abstract: Methods of operating a memory include increasing a voltage applied to a first access line from a first voltage to a second voltage higher than the first voltage while applying the first voltage to a second access line, the first access line coupled to a target memory cell of the programming operation and an unselected memory cell not targeted for the programming operation, and the second access line coupled to memory cells not targeted for the programming operation. After increasing the voltage applied to the first access line, increasing the voltage applied to the first access line from the second voltage to a third voltage higher than the second voltage and increasing a voltage applied to the second access line from the first voltage to a fourth voltage higher than the first voltage and lower than the third voltage.

公开(公告)号：US09666282B1

公开(公告)日：2017-05-30

申请号：US15145204

申请日：2016-05-03

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yogesh Luthra ,  Kim-Fung Chan ,  Xiaojiang Guo

IPC: G11C16/10 ,  G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/32

Abstract: In an example, a method may include increasing a voltage applied to an unprogrammed first memory cell in a string of series-connected memory cells from a first voltage to a second voltage while a voltage applied to second memory cells in the string of series-connected memory cells is at the first voltage and increasing the voltage applied to the second memory cells from the first voltage to a pass voltage concurrently with increasing the voltage applied to the unprogrammed first memory cell from the second voltage to a program voltage.