DYNAMICALLY CONFIGURABLE DATA MODULATION IN MEMORY SYSTEMS

    公开(公告)号:US20250103214A1

    公开(公告)日:2025-03-27

    申请号:US18790233

    申请日:2024-07-31

    Abstract: Described are systems and methods for dynamically configurable data modulation in memory systems. An example memory sub-system comprises a controller managing one or more memory devices. The controller is configured to perform operations, comprising: receiving a unit of data to be stored on the memory device; identifying a set of parameter values characterizing a target location of the unit of data on the memory device; determining a modulation code corresponding to the set of parameter values; modulating the unit of data by a modulation operation identified by the modulation code; and storing, on the memory device, the modulated unit of data.

    MEMORY SUB-SYSTEM DATA MIGRATION
    2.
    发明公开

    公开(公告)号:US20230176789A1

    公开(公告)日:2023-06-08

    申请号:US18103857

    申请日:2023-01-31

    CPC classification number: G06F3/0659 G06F3/0604 G06F3/0679

    Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

    MEMORY SUB-SYSTEM DATA MIGRATION
    3.
    发明申请

    公开(公告)号:US20230043733A1

    公开(公告)日:2023-02-09

    申请号:US17395695

    申请日:2021-08-06

    Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

    Memory sub-system data migration
    5.
    发明授权

    公开(公告)号:US11829650B2

    公开(公告)日:2023-11-28

    申请号:US18103857

    申请日:2023-01-31

    CPC classification number: G06F3/0659 G06F3/0604 G06F3/0679

    Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

    ADAPTABLE DATA MODULATION IN MEMORY SYSTEMS

    公开(公告)号:US20250103213A1

    公开(公告)日:2025-03-27

    申请号:US18790132

    申请日:2024-07-31

    Abstract: Described are systems and methods for adaptable data modulation. An example memory sub-system comprises a controller managing one or more memory devices. The controller is configured to perform operations, comprising: receiving a unit of data to be written to the memory device; splitting the unit of data into a plurality of segments; modulating each segment of the unit of data by a modulation operation using a modulation mask derived from a corresponding seed value; and generating a modulated unit of data comprising a plurality of modulated segments and a plurality of corresponding seed identifiers, wherein each seed identifier identifies a seed value that has been used for modulating a respective segment of the unit of data.

    Memory sub-system data migration
    7.
    发明授权

    公开(公告)号:US11593032B1

    公开(公告)日:2023-02-28

    申请号:US17395695

    申请日:2021-08-06

    Abstract: A method includes receiving a command to write data to a memory device and writing the data to a first memory tier of the memory device. The first memory tier of the memory device is a dynamic memory tier that utilizes single level cells (SLCs), multi-level cells (MLCs), and triple level cells (TLCs). The method further includes migrating the data from the first memory tier of the memory device to a second memory tier of the memory device. The second memory tier of the memory device is a static memory tier that utilizes quad level cells (QLCs).

    DYNAMIC BIT FLIP THRESHOLDS BASED ON SOFT BIT AND MATCH BIT

    公开(公告)号:US20250110658A1

    公开(公告)日:2025-04-03

    申请号:US18781696

    申请日:2024-07-23

    Abstract: A soft input is obtained from a sense word corresponding to encoded host data read from the memory device and decoded using a parity-check matrix. A match array is maintained. Each iteration of an error correcting code operation a number of unsatisfied check nodes of a respective bit of the sense word is calculated for each bit of the sense word. A bit flip threshold from a threshold data structure is obtained based on a current iteration of the error correcting code operation, a soft bit associated with the respective bit, and a match bit associated with the respective bit. The respective bit is flipped based on the number of unsatisfied check nodes satisfying the bit flip threshold.

    MODULATION CODE PERMUTATION SELECTION FOR DATA MODULATION IN MEMORY SYSTEMS

    公开(公告)号:US20250103238A1

    公开(公告)日:2025-03-27

    申请号:US18781970

    申请日:2024-07-23

    Abstract: Described are systems and methods for selecting a modulation code permutation for data modulation in a memory system. An example memory sub-system comprises a controller managing one or more memory devices. The controller is configured to perform operations including: receiving data to be written to the memory device; selecting, from a set of modulation code permutations for modifying data to be written to the memory device, a modulation code permutation; determining that a cost metric value corresponding to storing data modified by the modulation code permutation on the memory device satisfies a target condition; generating, using the modulation code permutation, modulated data from the data to be written; and storing, on the memory device, the modulated data.

    ADJUSTING WORDLINE DISTRIBUTION IN A MEMORY DEVICE BASED ON MODULATION OF HOST DATA

    公开(公告)号:US20250103230A1

    公开(公告)日:2025-03-27

    申请号:US18781692

    申请日:2024-07-23

    Abstract: Host data to be programmed to a plurality of memory cells associated with a wordline of a memory device is received from a host system. The host data into a plurality of partitions is divided. Each of the plurality of partitions is divided into a respective plurality of sub-partitions. One or more modulation mappings to be applied to the plurality of sub-partitions are determined based on the host data of the plurality of partitions. Host data of each sub-partition of the plurality of sub-partitions is modified based on the one or more modulation mappings. The modified host data of each sub-partition is written to the plurality of memory cells associated with the wordline.

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