公开(公告)号：US20190272866A1

公开(公告)日：2019-09-05

申请号：US16416059

申请日：2019-05-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Satoshi Yamanaka ,  Tetsuaki Okahiro

IPC: G11C11/4091 ,  G11C11/4074

Abstract: Apparatuses and methods for providing driving signals in semiconductor devices are described. An example apparatus includes a plurality of memory cell mats including a plurality of word lines and a word line driver coupled to the plurality of word lines of the plurality of memory cell mats. The word line driver is configured, responsive to a row active command, to provide a first voltage to a selected word line of the plurality of the word lines of a selected memory cell mat of the plurality of memory cell mats, provide a second voltage different from the first voltage to each of unselected word lines of the plurality of the word lines of the selected memory cell mats of the plurality of memory cell mats, and provide no voltage to each of the plurality of word lines of each of unselected memory cell mats of the plurality of memory cell mats.

公开(公告)号：US10347321B1

公开(公告)日：2019-07-09

申请号：US15881200

申请日：2018-01-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Satoshi Yamanaka ,  Tetsuaki Okahiro

IPC: G11C11/4091 ,  G11C11/4074

CPC classification number: G11C11/4091 ,  G11C11/4074

Abstract: Apparatuses and methods for providing driving signals in semiconductor devices are described. An example apparatus includes a plurality of memory cell mats including a plurality of word lines and a word line driver coupled to the plurality of word lines of the plurality of memory cell mats. The word line driver is configured, responsive to a row active command, to provide a first voltage to a selected word line of the plurality of the word lines of a selected memory cell mat of the plurality of memory cell mats, provide a second voltage different from the first voltage to each of unselected word lines of the plurality of the word lines of the selected memory cell mats of the plurality of memory cell mats, and provide no voltage to each of the plurality of word lines of each of unselected memory cell mats of the plurality of memory cell mats.

公开(公告)号：US10607689B2

公开(公告)日：2020-03-31

申请号：US16416059

申请日：2019-05-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Satoshi Yamanaka ,  Tetsuaki Okahiro

IPC: G11C11/40 ,  G11C11/4091 ,  G11C11/4074 ,  G11C11/408 ,  G11C8/14 ,  G11C5/02 ,  G11C8/08 ,  G11C8/12

Abstract: Apparatuses and methods for providing driving signals in semiconductor devices are described. An example apparatus includes a plurality of memory cell mats including a plurality of word lines and a word line driver coupled to the plurality of word lines of the plurality of memory cell mats. The word line driver is configured, responsive to a row active command, to provide a first voltage to a selected word line of the plurality of the word lines of a selected memory cell mat of the plurality of memory cell mats, provide a second voltage different from the first voltage to each of unselected word lines of the plurality of the word lines of the selected memory cell mats of the plurality of memory cell mats, and provide no voltage to each of the plurality of word lines of each of unselected memory cell mats of the plurality of memory cell mats.

公开(公告)号：US09472264B2

公开(公告)日：2016-10-18

申请号：US14657912

申请日：2015-03-13

Applicant: Micron Technology, Inc.

Inventor： Tetsuaki Okahiro ,  Ryuji Takishita

IPC: G11C11/4091 ,  G11C11/4074

CPC classification number: G11C11/4091 ,  G11C11/4074

Abstract: An apparatus includes a memory cell, a bit line coupled to the memory cell, and a sense amplifier configured to amplify a data signal on the bit line read out from the memory cell. The sense amplifier is operated in a first mode with a first power source voltage difference and operated in a second mode with a second power source voltage difference smaller than the first power source voltage difference.

Abstract translation: 一种装置，包括存储单元，耦合到存储单元的位线，以及配置成放大从存储单元读出的位线上的数据信号的读出放大器。 读出放大器在具有第一电源电压差的第一模式下操作，并且以第二电源电压差小于第一电源电压差在第二模式下操作。

公开(公告)号：US20190237128A1

公开(公告)日：2019-08-01

申请号：US15881200

申请日：2018-01-26

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Satoshi Yamanaka ,  Tetsuaki Okahiro

IPC: G11C11/4091 ,  G11C11/4074

CPC classification number: G11C11/4091 ,  G11C11/4074

Abstract: Apparatuses and methods for providing driving signals in semiconductor devices are described. An example apparatus includes a plurality of memory cell mats including a plurality of word lines and a word line driver coupled to the plurality of word lines of the plurality of memory cell mats. The word line driver is configured, responsive to a row active command, to provide a first voltage to a selected word line of the plurality of the word lines of a selected memory cell mat of the plurality of memory cell mats, provide a second voltage different from the first voltage to each of unselected word lines of the plurality of the word lines of the selected memory cell mats of the plurality of memory cell mats, and provide no voltage to each of the plurality of word lines of each of unselected memory cell mats of the plurality of memory cell mats.