公开(公告)号：US10510805B2

公开(公告)日：2019-12-17

申请号：US15439727

申请日：2017-02-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  H01L23/532

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

公开(公告)号：US10903276B2

公开(公告)日：2021-01-26

申请号：US16685276

申请日：2019-11-15

Applicant: Micron Technology, Inc.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  H01L23/532

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

公开(公告)号：US20200091244A1

公开(公告)日：2020-03-19

申请号：US16685276

申请日：2019-11-15

Applicant: Micron Technology, Inc.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L27/24 ,  H01L45/00 ,  H01L23/528 ,  H01L23/532

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

公开(公告)号：US20170229516A1

公开(公告)日：2017-08-10

申请号：US15439727

申请日：2017-02-22

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L27/24 ,  H01L23/532 ,  H01L45/00 ,  H01L23/528

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

公开(公告)号：US20150171321A1

公开(公告)日：2015-06-18

申请号：US14106535

申请日：2013-12-13

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tsz Wah Chan ,  Yongjun J. Hu ,  Swapnil Lengade

IPC: H01L45/00

CPC classification number: H01L27/2481 ,  H01L23/528 ,  H01L23/53257 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/144 ,  H01L45/16

Abstract: The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.

Abstract translation: 所公开的技术涉及集成电路，包括存储器件。 形成集成电路的方法包括提供包括第一区域和第二区域的表面，其中第一区域由与第二区域不同的材料形成。 该方法还包括形成与第一和第二区域接触并穿过第一和第二区域的播种材料。 该方法还包括在接种材料上形成包含钨的金属。