公开(公告)号：US11639413B2

公开(公告)日：2023-05-02

申请号：US16339672

申请日：2017-10-10

申请人： Mitsui Chemicals, Inc.

发明人： Nigel Ribeiro ,  Jie An Yang ,  Hongbo Wang ,  Yixi Lin ,  Masakazu Murakami ,  Takashi Unezaki ,  Haruyuki Makio

IPC分类号： C08G18/08 ,  C08G18/48 ,  C08G18/62 ,  C08G75/02 ,  C08K5/1545 ,  G02B1/04 ,  C08G18/40 ,  G02C7/10 ,  G02C7/00

摘要： A polymerizable composition for optical materials of the present invention includes a polymer (a) comprised of one or more compounds selected from compounds represented by the following General Formulas (1) to (4), a compound (b) of which light absorption characteristics vary by sensing changes in environment; and a polymerization reactive compound (c) (except for the polymer (a)).

公开(公告)号：US11332643B2

公开(公告)日：2022-05-17

申请号：US16629719

申请日：2018-07-10

申请人： MITSUI CHEMICALS, INC.

发明人： Jun Kamada ,  Tomoya Matayoshi ,  Michio Eriguchi ,  Kaichiro Haruta ,  Kenichi Fujii ,  Takashi Unezaki ,  Kazuo Kohmura

IPC分类号： C09J7/25 ,  B32B3/30 ,  B32B7/022 ,  B32B27/08 ,  B32B27/32 ,  C09J7/24 ,  C09J7/38 ,  B32B7/12

摘要： Provided is an adhesive member including: a base material having an uneven shape on at least one surface; and a surface layer covering at least a portion of the surface having the uneven shape on the base material.

公开(公告)号：US10988647B2

公开(公告)日：2021-04-27

申请号：US16606789

申请日：2018-04-19

申请人： Mitsui Chemicals, Inc.

发明人： Jun Kamada ,  Kaichiro Haruta ,  Takashi Unezaki ,  Kiyomi Imagawa ,  Kenichi Fujii ,  Yasuhisa Kayaba ,  Kazuo Kohmura

IPC分类号： C09J179/08 ,  C09J5/00 ,  H01L21/304 ,  H01L21/56

摘要： The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.