Method of manufacturing substrate layered body and layered body

    公开(公告)号:US12261143B2

    公开(公告)日:2025-03-25

    申请号:US17284833

    申请日:2019-10-17

    Abstract: A method of manufacturing a substrate layered body includes: a step of applying a bonding material to the surface of at least one of a first substrate or a second substrate; a step of curing the bonding material applied on the surface to form a bonding layer having a reduced modulus at 23° C. of 10 GPa or less; and a step of bonding the first substrate and the second substrate via the bonding layer formed.

    Blocked isocyanate, coating composition, adhesive composition, and article

    公开(公告)号:US11072678B2

    公开(公告)日:2021-07-27

    申请号:US16456967

    申请日:2019-06-28

    Abstract: The blocked isocyanate is a blocked isocyanate containing a latent isocyanate group, which is an isocyanate group blocked with a blocking agent, wherein the blocked isocyanate includes a first latent isocyanate group that is an isocyanate group blocked with a first blocking agent and a second latent isocyanate group that is an isocyanate group blocked with a second blocking agent; and the first blocking agent is represented by general formula (1) below, and has a higher catalysis activity that activates the isocyanate group than that of the second blocking agent. (where R1 to R3 represent a hydrocarbon group having 1 to 12 carbon atoms or a hydrogen atom, and at least one of R1 to R3 represents a hydrogen atom, and R1 and R3 may be bonded to each other to form a heterocycle. R4 represents a hydrocarbon group having 1 to 12 carbon atoms, a hydrogen atom, or an atomic group represented by —NR5R6 (R5 and R6 represent a hydrocarbon group having 1 to 12 carbon atoms, and R5 and R1 may be bonded to each other to form a heterocycle and R6 and R3 may be bonded to each other to form a heterocycle).

    Method for producing semiconductor device and intermediate for semiconductor device

    公开(公告)号:US11581197B2

    公开(公告)日:2023-02-14

    申请号:US16611653

    申请日:2018-05-10

    Abstract: This method for producing a semiconductor device comprises: a first step wherein a plurality of semiconductor chips are affixed onto a supporting substrate such that circuit surfaces of the semiconductor chips face the supporting substrate; a second step wherein a plurality of sealed layers are formed at intervals by applying the sealing resin onto the semiconductor chips by three-dimensional modeling method, each sealed layer containing one or more semiconductor chips embedded in a sealing resin; a third step wherein the sealed layers are cured or solidified; and a fourth step wherein sealed bodies are obtained by separating the cured or solidified sealed layers from the supporting substrate.

    Semiconductor substrate manufacturing method, semiconductor device, and method for manufacturing same

    公开(公告)号:US10988647B2

    公开(公告)日:2021-04-27

    申请号:US16606789

    申请日:2018-04-19

    Abstract: The purpose of the present invention is to provide a semiconductor substrate manufacturing method, which prevents detachment of a semiconductor wafer being ground, and which prevents cracking or chipping in a semiconductor substrate obtained. In order to solve the problem, the semiconductor substrate manufacturing method comprises: a polyimide layer forming step of forming a polyimide layer on a support material; a wafer attaching step of affixing the support material and a semiconductor wafer to each other with the polyimide layer disposed therebetween; a wafer grinding step of grinding the semiconductor wafer; a support material peeling step of peeling the support material from the polyimide layer; and a polyimide layer peeling step of peeling the polyimide layer from the semiconductor wafer. The polyimide layer includes polyimide which includes a benzophenone skeleton and an aliphatic structure, wherein an amine equivalent weight is 4000 to 20000.

    Blocked isocyanate, coating composition, adhesive composition, and article

    公开(公告)号:US10385157B2

    公开(公告)日:2019-08-20

    申请号:US14913231

    申请日:2014-08-12

    Abstract: The blocked isocyanate is a blocked isocyanate containing a latent isocyanate group, which is an isocyanate group blocked with a blocking agent, wherein the blocked isocyanate includes a first latent isocyanate group that is an isocyanate group blocked with a first blocking agent and a second latent isocyanate group that is an isocyanate group blocked with a second blocking agent; and the first blocking agent is represented by general formula (1) below, and has a higher catalysis activity that activates the isocyanate group than that of the second blocking agent. (where R1 to R3 represent a hydrocarbon group having 1 to 12 carbon atoms or a hydrogen atom, and at least one of R1 to R3 represents a hydrogen atom, and R1 and R3 may be bonded to each other to form a heterocycle. R4 represents a hydrocarbon group having 1 to 12 carbon atoms, a hydrogen atom, or an atomic group represented by —NR5R6 (R5 and R6 represent a hydrocarbon group having 1 to 12 carbon atoms, and R5 and R1 may be bonded to each other to form a heterocycle and R6 and R3 may be bonded to each other to form a heterocycle).

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