公开(公告)号：US20190139760A1

公开(公告)日：2019-05-09

申请号：US16177286

申请日：2018-10-31

Applicant: MONASH UNIVERSITY

Inventor： Michael Sears Fuhrer ,  John Thery Hellerstedt ,  Mark Thomas Edmonds ,  James Lee Richard Jessee Collins ,  Chang Liu

IPC: H01L21/02 ,  H01L29/66 ,  H01L43/06 ,  H01L51/05 ,  H01L29/16

Abstract: Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.

公开(公告)号：US11239073B2

公开(公告)日：2022-02-01

申请号：US16177286

申请日：2018-10-31

Applicant: MONASH UNIVERSITY

Inventor： Michael Sears Fuhrer ,  John Thery Hellerstedt ,  Mark Thomas Edmonds ,  James Lee Richard Jessee Collins ,  Chang Liu

IPC: H01L29/66 ,  H01L21/02 ,  H01L43/06 ,  H01L51/05 ,  H01L29/12 ,  H01L29/68 ,  H01L29/16

Abstract: Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.