公开(公告)号：USRE49202E1

公开(公告)日：2022-09-06

申请号：US16030344

申请日：2018-07-09

申请人： MacDermid Enthone Inc.

发明人： Vincent Paneccasio, Jr. ,  Xuan Lin ,  Paul Figura ,  Richard Hurtubise

IPC分类号： H01L21/4763 ,  H01L21/288 ,  C25D3/38 ,  C25D7/12 ,  H01L21/768

摘要： An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.