公开(公告)号：US20040121575A1

公开(公告)日：2004-06-24

申请号：US10322654

申请日：2002-12-19

Applicant: Macronix International Co., Ltd.

Inventor： Chao-Yang Chen

IPC: B32B003/30 ,  B32B003/28 ,  H01L021/44

CPC classification number: H01L21/26586 ,  H01L21/74 ,  H01L27/10814 ,  H01L27/10885 ,  Y10S438/974

Abstract: A method of manufacturing semiconductor devices with buried conductive lines is disclosed. The method uses an ion implantation process to form buried conductive lines under isolation regions such as shallow trench isolations. The buried conductive lines connect neighboring active regions and replace conventional contacts and lead lines connecting the active regions.

Abstract translation: 公开了一种制造具有埋入导线的半导体器件的方法。 该方法使用离子注入工艺在诸如浅沟槽隔离的隔离区域下形成掩埋导电线。 掩埋的导线连接相邻的有源区，并代替连接有源区的常规触点和引线。