公开(公告)号：US20140329387A1

公开(公告)日：2014-11-06

申请号：US14334158

申请日：2014-07-17

Applicant: Macronix International Co., Ltd.

Inventor： Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L21/28

CPC classification number: H01L21/28282 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

Abstract: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer layer of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

Abstract translation: 提供了一种改进的半导体器件，由此半导体器件由包括第一电介质层，设置在第一电介质层上的数据存储材料和设置在数据存储材料上的第二电介质层的分层结构限定， 半导体器件的外层。 例如，半导体器件可以是具有基本上围绕SONOS结构的氧化物 - 氧化物（ONO）膜的SONOS结构。 本发明还提供了制造本发明的半导体器件和SONOS结构的方法。

公开(公告)号：US09384989B2

公开(公告)日：2016-07-05

申请号：US14334158

申请日：2014-07-17

Applicant: Macronix International Co., Ltd.

Inventor： Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L21/28 ,  H01L29/792 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L21/28282 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

Abstract: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer layer of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

Abstract translation: 提供了一种改进的半导体器件，由此半导体器件由包括第一电介质层，设置在第一电介质层上的数据存储材料和设置在数据存储材料上的第二电介质层的分层结构限定， 半导体器件的外层。 例如，半导体器件可以是具有基本上围绕SONOS结构的氧化物 - 氧化物（ONO）膜的SONOS结构。 本发明还提供了制造本发明的半导体器件和SONOS结构的方法。