公开(公告)号：US09627220B1

公开(公告)日：2017-04-18

申请号：US14932546

申请日：2015-11-04

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Jr-Meng Wang ,  Chih-Yuan Wu ,  Kuanf-Wen Liu ,  Jung-Yi Guo ,  Chun-Min Cheng

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/02

CPC classification number: H01L21/31111 ,  H01L27/0207 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582 ,  H01L28/00

Abstract: Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. The methods may include two or more nitride removal steps during formation of gate layers in vertical memory cells. The two or more nitride removal steps may allow for wider gate layers increasing the gate fill-in, reducing the occurrence of voids, and thereby improving the word line resistance.

公开(公告)号：US09384989B2

公开(公告)日：2016-07-05

申请号：US14334158

申请日：2014-07-17

Applicant: Macronix International Co., Ltd.

Inventor： Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L21/28 ,  H01L29/792 ,  H01L27/115 ,  H01L29/66

CPC classification number: H01L21/28282 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

Abstract: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer layer of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

Abstract translation: 提供了一种改进的半导体器件，由此半导体器件由包括第一电介质层，设置在第一电介质层上的数据存储材料和设置在数据存储材料上的第二电介质层的分层结构限定， 半导体器件的外层。 例如，半导体器件可以是具有基本上围绕SONOS结构的氧化物 - 氧化物（ONO）膜的SONOS结构。 本发明还提供了制造本发明的半导体器件和SONOS结构的方法。

公开(公告)号：US09153535B1

公开(公告)日：2015-10-06

申请号：US14523591

申请日：2014-10-24

Applicant: MACRONIX International Co., Ltd.

Inventor： Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L21/4763 ,  H01L21/44 ,  H01L23/528

CPC classification number: H01L23/528 ,  H01L21/0337 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A line layout method includes: forming i core layers each including a main layer that extends in a first direction and has a first end and a second end, and an end layer that is connected with the first end of the main layer and protrudes in a second direction; forming a first spacer on a sidewall of the core layer; removing the core layers; and forming 2i auxiliary patterns. i is an integer equal to or greater than 1. The auxiliary patterns extend in the first direction and are spaced and arranged in the first direction. In a region corresponding to the end layer, a portion not overlapping the auxiliary patterns has an I-beam shape.

Abstract translation: 线路布置方法包括：形成i个核心层，每个核心层包括沿第一方向延伸并具有第一端和第二端的主层，以及端层，其与主层的第一端连接并突出在 第二个方向 在芯层的侧壁上形成第一间隔物; 去除核心层; 并形成2i辅助图案。 i是等于或大于1的整数。辅助图案在第一方向上延伸并且沿第一方向间隔布置。 在与端层对应的区域中，不与辅助图案重叠的部分具有I形梁形状。

公开(公告)号：US20140329387A1

公开(公告)日：2014-11-06

申请号：US14334158

申请日：2014-07-17

Applicant: Macronix International Co., Ltd.

Inventor： Ching-Chang Lin ,  Kai-Hsiang Chang ,  Chih-Yuan Wu ,  Kuang-Wen Liu

IPC: H01L21/28

CPC classification number: H01L21/28282 ,  H01L27/11563 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7923

Abstract: An improved semiconductor device is provided whereby the semiconductor device is defined by a layered structure comprising a first dielectric layer, a data storage material disposed on the first dielectric layer, and a second dielectric layer disposed on the data storage material, the layered structured substantially forming the outer layer of the semiconductor device. For example, the semiconductor device may be a SONOS structure having an oxide-nitride-oxide (ONO) film that substantially surrounds the SONOS structure. The invention also provides methods for fabricating the semiconductor device and the SONOS structure of the invention.

Abstract translation: 提供了一种改进的半导体器件，由此半导体器件由包括第一电介质层，设置在第一电介质层上的数据存储材料和设置在数据存储材料上的第二电介质层的分层结构限定， 半导体器件的外层。 例如，半导体器件可以是具有基本上围绕SONOS结构的氧化物 - 氧化物（ONO）膜的SONOS结构。 本发明还提供了制造本发明的半导体器件和SONOS结构的方法。