公开(公告)号：US20140264232A1

公开(公告)日：2014-09-18

申请号：US13895059

申请日：2013-05-15

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： FENG-MIN LEE ,  ERH-KUN LAI ,  WEI-CHIH CHIEN ,  MING-HSIU LEE ,  CHIH-CHIEH YU

IPC: H01L21/02 ,  H01L45/00

CPC classification number: H01L21/02551 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L27/2436 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/146 ,  H01L45/1633

Abstract: A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell.

Abstract translation: 描述了由辐射诱导的光酸辅助形成的原位氧化物形成的金属氧化物。 该方法包括将感光材料沉积在电极的金属表面上。 感光材料暴露于辐射（例如紫外光）时，诸如光酸产生剂的组分形成氧化反应物，例如导致金属在金属表面氧化的光酸。 作为氧化的结果，形成金属氧化物层。 然后可以去除感光材料，并且可以将元件的后续元件形成为与金属氧化物层接触。 金属氧化物可以通过过渡金属的氧化而成为过渡金属氧化物。 金属氧化物层可以作为可编程电阻存储单元中的存储元件来应用。 金属氧化物可以是可编程金属化电池的元件。

公开(公告)号：US20210035644A1

公开(公告)日：2021-02-04

申请号：US16529553

申请日：2019-08-01

Applicant: Macronix International Co., Ltd.

Inventor： WEI-CHIH CHIEN ,  Hsin-Yi Ho ,  Hsiang-Lan Lung

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34

Abstract: A memory apparatus and a data access method for a memory are provided. The data access method includes: receiving a data erase command for performing a data erase operation; and, during the data erase operation: configuring a selected memory cell block in the memory according to the data erase command; providing a flag memory cell corresponding to the selected memory cell block, erasing a data in the flag memory cell according to the data erase command, and keeping a data in a plurality of selected memory cells in the selected memory cell block unchanged.

公开(公告)号：US20140264237A1

公开(公告)日：2014-09-18

申请号：US13931512

申请日：2013-06-28

Applicant: Macronix International Co., Ltd.

Inventor： I YUEH CHEN ,  WEI-CHIH CHIEN

IPC: H01L45/00

CPC classification number: H01L45/146 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1633

Abstract: A structure for a resistive memory device and a method to fabricate the same is disclosed. The method includes providing a bottom electrode comprising a metal and forming a memory layer on the bottom electrode. The memory layer includes a first layer of metal oxide, and a second layer including the nitrogen-containing metal oxide. A top electrode is formed over the memory layer.

Abstract translation: 公开了一种用于电阻式存储器件的结构及其制造方法。 该方法包括提供包括金属的底部电极并在底部电极上形成存储层。 存储层包括第一层金属氧化物，第二层包括含氮金属氧化物。 顶部电极形成在存储层上。