公开(公告)号：US20130113047A1

公开(公告)日：2013-05-09

申请号：US13288189

申请日：2011-11-03

申请人： Mahaveer Sathaiya Dhanyakumar ,  Wei-Hao Wu ,  Tsung-Hsing Yu ,  Chia-Wen Liu ,  Tzer-Min Shen ,  Ken-Ichi Goto ,  Zhiqiang Wu

发明人： Mahaveer Sathaiya Dhanyakumar ,  Wei-Hao Wu ,  Tsung-Hsing Yu ,  Chia-Wen Liu ,  Tzer-Min Shen ,  Ken-Ichi Goto ,  Zhiqiang Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0653 ,  H01L21/26586 ,  H01L21/76232 ,  H01L29/1033 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/66492 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7833

摘要： A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized.

公开(公告)号：US09000526B2

公开(公告)日：2015-04-07

申请号：US13288189

申请日：2011-11-03

申请人： Mahaveer Sathaiya Dhanyakumar ,  Wei-Hao Wu ,  Tsung-Hsing Yu ,  Chia-Wen Liu ,  Tzer-Min Shen ,  Ken-Ichi Goto ,  Zhiqiang Wu

发明人： Mahaveer Sathaiya Dhanyakumar ,  Wei-Hao Wu ,  Tsung-Hsing Yu ,  Chia-Wen Liu ,  Tzer-Min Shen ,  Ken-Ichi Goto ,  Zhiqiang Wu

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/762 ,  H01L29/66 ,  H01L29/10 ,  H01L21/265

CPC分类号： H01L29/0653 ,  H01L21/26586 ,  H01L21/76232 ,  H01L29/1033 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/66492 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/78 ,  H01L29/7833

摘要： A MOSFET disposed between shallow trench isolation (STI) structures includes an epitaxial silicon layer formed over a substrate surface and extending over inwardly extending ledges of the STI structures. The gate width of the MOSFET is therefore the width of the epitaxial silicon layer and greater than the width of the original substrate surface between the STI structures. The epitaxial silicon layer is formed over the previously doped channel and is undoped upon deposition. A thermal activation operation may be used to drive dopant impurities into the transistor channel region occupied by the epitaxial silicon layer but the dopant concentration at the channel location where the epitaxial silicon layer intersects with the gate dielectric, is minimized.

摘要翻译： 设置在浅沟槽隔离（STI）结构之间的MOSFET包括形成在衬底表面上并在STI结构的向内延伸的突出部上延伸的外延硅层。 因此，MOSFET的栅极宽度是外延硅层的宽度，并且大于STI结构之间的原始衬底表面的宽度。 外延硅层形成在预先掺杂的沟道上，并且在沉积时未被掺杂。 可以使用热激活操作来将掺杂剂杂质驱动到由外延硅层占据的晶体管沟道区域中，但是外延硅层与栅极电介质相交的沟道位置处的掺杂剂浓度最小化。

公开(公告)号：US08993424B2

公开(公告)日：2015-03-31

申请号：US13288201

申请日：2011-11-03

申请人： Chia-Wen Liu ,  Tsung-Hsing Yu ,  Dhanyakumar Mahaveer Sathaiya ,  Wei-Hao Wu ,  Ken-Ichi Goto ,  Tzer-Min Shen ,  Zhiqiang Wu

发明人： Chia-Wen Liu ,  Tsung-Hsing Yu ,  Dhanyakumar Mahaveer Sathaiya ,  Wei-Hao Wu ,  Ken-Ichi Goto ,  Tzer-Min Shen ,  Zhiqiang Wu

IPC分类号： H01L21/425 ,  H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/165 ,  H01L21/265

CPC分类号： H01L29/66492 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/931

摘要： Provided is a transistor and a method for forming a transistor in a semiconductor device. The method includes performing at least one implantation operation in the transistor channel area, then forming a silicon carbide/silicon composite film over the implanted area prior to introducing further dopant impurities. A halo implantation operation with a very low tilt angle is used to form areas of high dopant concentration at edges of the transistor channel to alleviate short channel effects. The transistor structure so-formed includes a reduced dopant impurity concentration at the substrate interface with the gate dielectric and a peak concentration about 10-50 nm below the surface. The dopant profile also includes the transistor channel having high dopant impurity concentration areas at opposed ends of the transistor channel.

摘要翻译： 提供了一种用于在半导体器件中形成晶体管的晶体管和方法。 该方法包括在晶体管沟道区域中执行至少一个注入操作，然后在引入另外的掺杂杂质之前在注入区上形成碳化硅/硅复合膜。 使用具有非常低的倾斜角的光晕注入操作来在晶体管沟道的边缘处形成高掺杂浓度的区域，以减轻短沟道效应。 如此形成的晶体管结构包括在与栅极电介质的衬底界面处的减少的掺杂剂杂质浓度和在表面下方约10-50nm的峰值浓度。 掺杂物分布还包括在晶体管沟道的相对端处具有高掺杂剂杂质浓度区域的晶体管沟道。

公开(公告)号：US20090169632A1

公开(公告)日：2009-07-02

申请号：US11967315

申请日：2007-12-31

申请人： Jui-Mei Lu ,  Chia-Wen Liu ,  Po Hong Lai ,  John Jiang Hann Lin ,  Chiao Pin Li ,  Sung En Chen ,  Yo Wen Lo ,  Ming-Thau Sheu ,  Min-Ying Lin

发明人： Jui-Mei Lu ,  Chia-Wen Liu ,  Po Hong Lai ,  John Jiang Hann Lin ,  Chiao Pin Li ,  Sung En Chen ,  Yo Wen Lo ,  Ming-Thau Sheu ,  Min-Ying Lin

IPC分类号： A61K38/02 ,  A61K9/50 ,  A61K31/70 ,  A61P43/00 ,  A61K31/7088 ,  A61K38/16

CPC分类号： A61K31/70 ,  A61K9/0019 ,  A61K9/1647 ,  A61K9/5031 ,  A61K31/7088

摘要： A sustained release composition comprising a polymer and manufacturing method thereof. The sustained release composition comprises a polymer, a bioactive agent, and a release rate determined agent, wherein the release rate determined agent is dispersed in the sustained release composition to control the release rate of the bioactive agent. The method comprises providing an oil phase comprising a bioactive agent, a polymer, and a release rate determined agent; providing an aqueous phase comprising a surfactant; mixing the oil phase with the aqueous phase to form the sustained release composition having a controlled release effect.

摘要翻译： 包含聚合物的缓释组合物及其制备方法。 持续释放组合物包含聚合物，生物活性剂和释放速率确定剂，其中将释放速率测定的试剂分散在持续释放组合物中以控制生物活性剂的释放速率。 该方法包括提供包含生物活性剂，聚合物和释放速率确定剂的油相; 提供包含表面活性剂的水相; 将油相与水相混合以形成具有控释功能的缓释组合物。

公开(公告)号：US09161943B2

公开(公告)日：2015-10-20

申请号：US11967315

申请日：2007-12-31

申请人： Jui-Mei Lu ,  Chia-Wen Liu ,  Po Hong Lai ,  John Jianghann Lin ,  Chiao Pin Li ,  Sung En Chen ,  Yo Wen Lo ,  Ming-Thau Sheu ,  Min-Ying Lin

发明人： Jui-Mei Lu ,  Chia-Wen Liu ,  Po Hong Lai ,  John Jianghann Lin ,  Chiao Pin Li ,  Sung En Chen ,  Yo Wen Lo ,  Ming-Thau Sheu ,  Min-Ying Lin

IPC分类号： A61K31/70 ,  A61K9/00 ,  A61K9/16 ,  A61K9/50 ,  A61K31/7088

CPC分类号： A61K31/70 ,  A61K9/0019 ,  A61K9/1647 ,  A61K9/5031 ,  A61K31/7088

摘要： A sustained release composition comprising a polymer and manufacturing method thereof. The sustained release composition comprises a polymer, a bioactive agent, and a release rate determined agent, wherein the release rate determined agent is dispersed in the sustained release composition to control the release rate of the bioactive agent. The method comprises providing an oil phase comprising a bioactive agent, a polymer, and a release rate determined agent; providing an aqueous phase comprising a surfactant; mixing the oil phase with the aqueous phase to form the sustained release composition having a controlled release effect.

摘要翻译： 包含聚合物的缓释组合物及其制备方法。 持续释放组合物包含聚合物，生物活性剂和释放速率确定剂，其中将释放速率测定的试剂分散在持续释放组合物中以控制生物活性剂的释放速率。 该方法包括提供包含生物活性剂，聚合物和释放速率确定剂的油相; 提供包含表面活性剂的水相; 将油相与水相混合以形成具有控释功能的缓释组合物。