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公开(公告)号：US4894703A
公开(公告)日：1990-01-16
申请号：US767613
申请日：1985-08-20
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/105
CPC分类号： H01L31/02161 , H01L31/022408 , H01L31/022416 , H01L31/105
摘要： A back-illuminated InGaAs photodiode is described in which a double layer of silicon nitride on the front surface serves several functions; both layers passivate the surface; an opening in the lower layer provides a diffusion mask for forming the p-n junction; and a narrower opening in the upper silicon nitride layer provides a deposition mask for forming a restricted area contact. In order to reduce strain near the junction, and hence reduce leakage currents and enhance reliability, the contact geometry has a narrow pedestal portion which contacts the surface in a zone remote from the junction edges and has a wider cap portion which is formed on the pedestal portion to seal the surface from the introduction of contaminants.
摘要翻译： 描述了背照式InGaAs光电二极管，其中前表面上的双层氮化硅具有若干功能; 两层钝化表面; 下层的开口提供用于形成p-n结的扩散掩模; 并且上部氮化硅层中的较窄的开口提供用于形成限制区域接触的沉积掩模。 为了减小接头附近的应变，并且因此减小泄漏电流并增强可靠性，接触几何形状具有窄的基座部分，其在远离接合边缘的区域中接触表面，并且具有形成在基座上的较宽的盖部分 部分以密封表面免受污染物的引入。
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公开(公告)号：US4395637A
公开(公告)日：1983-07-26
申请号：US328367
申请日：1981-12-07
IPC分类号： H03K17/082 , H03K17/567 , G02B27/00
CPC分类号： H03K17/0824 , H03K17/567
摘要： A normally-OFF switch includes a transistor branch path and a parallel pair of oppositely poled thyristor branch paths to protect against voltage surges. To minimize latching-on of the thyristors as a result of voltage surges, the thyristor branch paths including light emitting diodes which light up when excess current flows in the thyristor branch paths and actuate a photodiode array which biases the transistor path to conduction to divert excess current from the thyristor path.
摘要翻译： 常闭开关包括晶体管分支路径和并联的相对极化的晶闸管分支路径，以防止电压浪涌。 为了最小化由于电压浪涌导致的晶闸管的闭锁，晶闸管分支路径包括当过电流在晶闸管分支路径中流动时点亮的发光二极管，并且致动将晶体管路径偏置到导通以偏转过量的光电二极管阵列 电流从晶闸管路径。
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