摘要:
A charged particle beam writing apparatus includes an unit configured to irradiate a beam, a deflector configured to deflect the beam, a stage, on which a target is placed, configured to perform moving continuously, an lens configured to focus the beam onto the target, an unit configured to calculate a correction amount for correcting positional displacement of the beam on a surface of the target resulting from a first magnetic field caused by the lens and a second magnetic field caused by an eddy current generated by the first magnetic field and the moving of the stage, an unit configured to calculate a correction position where the positional displacement on the surface of the target has been corrected using the correction amount, and an unit configured to control the deflector so that the beam may be deflected onto the correction position.
摘要:
A charged particle beam apparatus in accordance with one preferred form of this invention includes an irradiation unit for irradiating a charged particle beam, an instrumentation unit which performs instrumentation of a reflection signal from a mark as obtained by scanning the mark while irradiating the charged particle beam onto the mark, and a measurement unit which uses an approximation equation defined by use of a prespecified mark shape function and an error function to perform the fitting of a waveform obtained based on the reflection signal and which measures beam resolution which becomes a parameter of the error function from the waveform obtained based on the reflection signal.