公开(公告)号：US09543116B2

公开(公告)日：2017-01-10

申请号：US15190899

申请日：2016-06-23

Applicant: Arcam AB

Inventor： Tomas Lock

IPC: A61N5/00 ,  H01J37/304 ,  B33Y10/00 ,  B33Y40/00 ,  B33Y50/02 ,  B28B1/00 ,  B28B17/00 ,  B29C67/00 ,  B22F3/105 ,  B23K15/00 ,  B23K15/02 ,  H01J37/30 ,  H01J37/317 ,  H01J37/305 ,  G01T1/29 ,  B33Y30/00

CPC classification number: H01J37/3045 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  B23K15/0013 ,  B23K15/002 ,  B23K15/0026 ,  B23K15/0086 ,  B23K15/02 ,  B28B1/001 ,  B28B17/00 ,  B28B17/0081 ,  B29C64/153 ,  B29C64/20 ,  B29C64/386 ,  B29C67/0077 ,  B29C67/0088 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y40/00 ,  B33Y50/02 ,  G01T1/295 ,  H01J37/09 ,  H01J37/244 ,  H01J37/30 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/305 ,  H01J37/317 ,  H01J2237/0453 ,  H01J2237/2445 ,  H01J2237/2448 ,  H01J2237/24514 ,  H01J2237/2826 ,  H01J2237/30433 ,  H01J2237/3045 ,  H01J2237/30472 ,  H01J2237/3128 ,  Y02P10/295

Abstract: A method is provided for forming a three-dimensional article through successive fusion of parts of a powder bed. The method includes the steps of: applying a first powder layer on a work table; directing an electron beam from an electron beam source over the work table, the directing of the electron beam causing the first powder layer to fuse in first selected locations according to a pre-determined model, so as to form a first part of a cross section of the three dimensional article, and intensity modulating X-rays from the powder layer or from a clean work table with a patterned aperture modulator and a patterned aperture resolver, wherein a verification of at least one of a size, position, scan speed, or shape of the electron beam is achieved by comparing detected intensity modulated X-ray signals with saved reference values.

Abstract translation: 提供了一种用于通过粉末床的部分的连续熔融来形成三维制品的方法。 该方法包括以下步骤：将第一粉末层施加在工作台上; 将来自电子束源的电子束引导到工作台上，根据预定模型引导使第一粉末层在第一选定位置熔化的电子束，以便形成横截面的第一部分 以及强度调制来自粉末层的X射线或来自具有图案化孔径调制器和图案化孔径分解器的清洁工作台的X射线，其中验证尺寸，位置，扫描速度或 通过将检测到的强度调制的X射线信号与保存的参考值进行比较来实现电子束的形状。

公开(公告)号：US09508528B2

公开(公告)日：2016-11-29

申请号：US14838848

申请日：2015-08-28

Applicant: NuFlare Technology, Inc.

Inventor： Hironori Mizoguchi

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/21 ,  H01J37/24 ,  H01J37/28 ,  H01J37/304

CPC classification number: H01J37/3174 ,  H01J37/21 ,  H01J37/241 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/3045 ,  H01J2237/30461 ,  H01J2237/31776

Abstract: A method for correcting a drift of an accelerating voltage includes measuring, after a position of a focus of a charged particle beam has been adjusted based on a first adjustment value and a predetermined time period has passed, a second adjustment value when the position of the focus of the charged particle beam is newly adjusted, calculating a deviation amount between the first adjustment value and the second adjustment value, calculating, using a correlation stored in a storage device, a correction value of an accelerating voltage to be applied to a beam source which emits the charged particle beam, where the correction value corresponds to the deviation amount, and correcting the accelerating voltage to be applied to the beam source, by using the correlation value.

Abstract translation: 一种用于校正加速电压的漂移的方法包括：在基于第一调整值和预定时间段已经调整带电粒子束的焦点的位置之后，测量第二调整值，当位置 重新调整带电粒子束的焦点，计算第一调整值和第二调整值之间的偏差量，使用存储在存储装置中的相关性来计算要施加到光束源的加速电压的校正值 其发射带电粒子束，其中校正值对应于偏差量，并且通过使用相关值来校正要施加到束源的加速电压。

公开(公告)号：US20130137044A1

公开(公告)日：2013-05-30

申请号：US13668619

申请日：2012-11-05

Applicant: CANON KABUSHIKI KAISHA

Inventor： Hirohito Ito ,  Yusuke Sugiyama

IPC: H01J3/26 ,  G03F7/20 ,  G21K5/04

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3177 ,  H01J2237/3045 ,  H01J2237/31761

Abstract: A scanning apparatus which performs scan on an object with a charged particle beam includes: a blanking deflector configured to individually blank a plurality of charged particle beams based on control data; a scanning deflector configured to collectively deflect the plurality of charged particle beams to perform the scan; and a controller. The controller is configured to hold first data used to obtain error in a scanning amount and a scanning direction of the scanning deflector relative to a reference scanning amount and a reference scanning direction with respect to each of the plurality of charged particle beams, and to generate the control data based on the first data so that the scan is performed for a target region on the object.

Abstract translation: 利用带电粒子束对物体进行扫描的扫描装置包括：消隐偏转器，被配置为基于控制数据单独地空白多个带电粒子束; 扫描偏转器，其被配置为共同地偏转所述多个带电粒子束以执行扫描; 和控制器。 控制器被配置为相对于多个带电粒子束中的每一个相对于参考扫描量和参考扫描方向保持用于获得扫描偏转器的扫描量和扫描方向的误差的第一数据，并且产生 基于第一数据的控制数据，使得针对对象上的目标区域执行扫描。

公开(公告)号：USRE44240E1

公开(公告)日：2013-05-28

申请号：US12189817

申请日：2008-08-12

Applicant: Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

Inventor： Marco Jan-Jaco Wieland ,  Bert Jan Kampherbeek ,  Alexander Hendrik Vincent Van Veen ,  Pieter Kruit

IPC: H01J37/30 ,  H01J37/304

CPC classification number: H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

Abstract: The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

Abstract translation: 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

公开(公告)号：US08384048B2

公开(公告)日：2013-02-26

申请号：US12146331

申请日：2008-06-25

Applicant: John C. Wiesner

Inventor： John C. Wiesner

IPC: G01N23/00

CPC classification number: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2025 ,  H01J2237/20292 ,  H01J2237/2485 ,  H01J2237/30438 ,  H01J2237/3045 ,  H01J2237/30455

Abstract: The invention provides a method for patterning a resist coated substrate carried on a stage, where the patterning utilizes a charged particle beam. The method comprises the steps of: moving the stage at a nominally constant velocity in a first direction; while the stage is moving, deflecting the charged particle beam in the first direction to compensate for the movement of the stage, the deflecting including: (a) compensating for an average velocity of the stage; and (b) separately compensating for the difference between an instantaneous position of the stage and a calculated position based on the average velocity. The separately compensating step uses a bandwidth of less than 10 MHz. The invention also provides a deflector control circuit for implementing the separate compensation functions.

Abstract translation: 本发明提供了一种用于图案化承载在载物台上的抗蚀剂涂覆的基底的方法，其中图案化使用带电粒子束。 该方法包括以下步骤：在第一方向以标称恒定的速度移动舞台; 当舞台正在移动时，使带电粒子束沿第一方向偏转以补偿舞台的移动，偏转包括：（a）补偿舞台的平均速度; 和（b）基于平均速度分别补偿载物台的瞬时位置与计算的位置之间的差。 单独的补偿步骤使用小于10MHz的带宽。 本发明还提供一种用于实现单独补偿功能的偏转器控制电路。

公开(公告)号：US20100288939A1

公开(公告)日：2010-11-18

申请号：US12771108

申请日：2010-04-30

Applicant: Rieko NISHIMURA

Inventor： Rieko NISHIMURA

IPC: H01J37/304 ,  H01J37/244 ,  H01J37/147

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/3045

Abstract: An electron beam is moved a long distance along a straight line from a sub-deflection region 101a to a diagonally opposite sub-deflection region 123w by main deflection of the beam, and a pattern P is written in the sub-deflection region 123w. The former writing step is repeated a plurality of times each with a different main deflection settling time, thereby writing a plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured. Further, the latter writing step is also repeated a plurality of times each with a different main deflection settling time, thereby writing another plurality of patterns P. The amount of displacement of each pattern P from its designed position is then measured.

Abstract translation: 电子束通过光束的主偏转沿着直线从副偏转区域101a移动到对角线相对的副偏转区域123w，并且将图案P写入副偏转区域123w。 前一个写入步骤重复多次，每次具有不同的主要偏转建立时间，从而写入多个图案P.然后测量每个图案P从其设计位置的位移量。 此外，后一个写入步骤也重复多次，每次具有不同的主偏转建立时间，从而再写出多个图案P.然后测量每个图案P从其设计位置的位移量。

公开(公告)号：US07834333B2

公开(公告)日：2010-11-16

申请号：US11855613

申请日：2007-09-14

Applicant: Rieko Nishimura ,  Shuichi Tamamushi

Inventor： Rieko Nishimura ,  Shuichi Tamamushi

IPC: G21K5/02

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J37/304 ,  H01J2237/3045 ,  H01J2237/30472

Abstract: In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

Abstract translation: 在带电粒子束光刻系统中，要绘制的图案区域被分成多个框架，主偏转将带电粒子束定位在框架内的子场，辅助偏转以子场为单位绘制图案。 带电粒子束光刻系统包括光束光学系统，其包括偏转光束的偏转器，驱动偏转器的驱动器以及根据指示要绘制的图案的图形数据来控制驱动器的偏转控制部分。 偏转控制部分根据确定为使得带电粒子束的照射位置的偏移具有一定值而不考虑子场中的辅助偏转的偏转量的变化的稳定时间来控制驾驶员。

公开(公告)号：US07692166B2

公开(公告)日：2010-04-06

申请号：US11762182

申请日：2007-06-13

Applicant: Masato Muraki ,  Haruo Yoda

Inventor： Masato Muraki ,  Haruo Yoda

IPC: H01J37/304 ,  H01L21/027

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/043 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: An exposure apparatus which draws a pattern on a substrate with a charged particle beam is disclosed. The exposure apparatus includes a detector which detects a charged particle beam, a deflector which deflects the charged particle beam to scan the substrate or the detector with the charged particle beam, and a controller which controls the deflector to scan each of a plurality of scanning ranges on the detector with the charged particle beam, and calculates, on the basis of the charged particle beam amount detected by the detector upon scanning the plurality of scanning ranges, the intensity distribution of the charged particle beam which strikes the detector.

Abstract translation: 公开了一种在具有带电粒子束的基板上绘制图案的曝光装置。 曝光装置包括检测带电粒子束的检测器，使带电粒子束偏转以利用带电粒子束扫描基板或检测器的偏转器，以及控制偏转器扫描多个扫描范围中的每一个的控制器 在具有带电粒子束的检测器上，并且基于扫描多个扫描范围时由检测器检测到的带电粒子束量计算撞击检测器的带电粒子束的强度分布。

公开(公告)号：US07547460B2

公开(公告)日：2009-06-16

申请号：US09950939

申请日：2001-09-12

Applicant: Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

Inventor： Antonella Cucchetti ,  Joseph Olson ,  Gregory Gibilaro ,  Rosario Mollica

IPC: C23C14/54 ,  C23C14/48

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J2237/3045

Abstract: Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.

Abstract translation: 提供了用于控制离子注入系统中的剂量均匀性的方法和装置。 根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。 存储的扫描波形在第二次注入过程中被调用并使用。 根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。 根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。 该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用 在第二次植入过程中调用扫描波形。

公开(公告)号：US20080078952A1

公开(公告)日：2008-04-03

申请号：US11537033

申请日：2006-09-29

Applicant: Atul GUPTA ,  Jonathan Gerald England

Inventor： Atul GUPTA ,  Jonathan Gerald England

IPC: H01J37/304 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/304 ,  H01J2237/1501 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/30483 ,  H01J2237/31703

Abstract: A technique for improving ion implantation based on ion beam angle-related information is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving ion implantation. The method may comprise obtaining angle-related information associated with an ion beam. The method may also comprise calculating, based on the angle-related information, an ion beam angle distribution over a wafer for one or more potential scanning modes. The method may further comprise selecting a desired scanning mode from the one or more potential scanning modes based on an evaluation of performance metric caused by the ion beam angle distribution.

Abstract translation: 公开了一种基于离子束角度相关信息改善离子注入的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于改进离子注入的方法。 该方法可以包括获得与离子束相关联的角度相关信息。 该方法还可以包括基于角度相关信息计算一个或多个潜在扫描模式的晶片上的离子束角度分布。 该方法还可以包括基于由离子束角分布引起的性能度量的评估，从一个或多个潜在扫描模式中选择期望的扫描模式。