公开(公告)号：US20060244088A1

公开(公告)日：2006-11-02

申请号：US11390246

申请日：2006-03-28

申请人： Makoto Inagaki ,  Kazuaki Igaki ,  Kosaku Saeki

发明人： Makoto Inagaki ,  Kazuaki Igaki ,  Kosaku Saeki

IPC分类号： H01L31/00

CPC分类号： H01L27/1462 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14643 ,  H01L31/0232

摘要： A MOS solid-state image pick-up device with a high S/N ratio is provided. On a surface of a photo-detecting section 2 formed inside a semiconductor substrate, an antireflection film 10 having a smaller area than a surface area of the photo-detecting section 2, with an insulating film 6 imposed therebetween, is provided. The antireflection film 10 is formed so as not to cover bordering portions between the photo-detecting section 2 and peripheral regions thereof. Each of a distance of a clearance S1 between the antireflection film 10 and a gate electrode 7 and a distance of a clearance between the antireflection film 10 and an element isolation region 5 is preferably equal to or greater than 0.2 μm. When the area of the antireflection film 10 is equal to or greater than 70% of the surface area of the photo-detecting section 2, even if used for a camera with interchangeable lenses, a fluctuation in sensitivity among pixels can be suppressed.

摘要翻译： 提供了具有高S / N比的MOS固体摄像装置。 在形成在半导体衬底内的光电检测部分2的表面上，设置了具有比光电检测部分2的表面积小的面积的反射防止膜10，其间施加有绝缘膜6。 防反射膜10形成为不覆盖光电检测部分2及其周边区域之间的边界部分。 防反射膜10和栅电极7之间的间隙S 1的距离与防反射膜10与元件隔离区域5之间的​​间隙的距离优选为0.2μm以上。 当防反射膜10的面积等于或大于光检测部分2的表面积的70％时，即使用于具有可互换透镜的照相机，也可以抑制像素之间的灵敏度的波动。

公开(公告)号：US08274586B2

公开(公告)日：2012-09-25

申请号：US12966286

申请日：2010-12-13

申请人： Motonari Katsuno ,  Kazuhiro Yamashita ,  Kosaku Saeki

发明人： Motonari Katsuno ,  Kazuhiro Yamashita ,  Kosaku Saeki

IPC分类号： H04N5/335 ,  H04N5/225

CPC分类号： G02B3/02 ,  G02B3/0056 ,  G02B5/045 ,  H01L27/14603 ,  H01L27/14605 ,  H01L27/14609 ,  H01L27/14627 ,  H04N5/2254

摘要： A solid-state imaging device according to an implementation of the present invention is a solid-state imaging device including a plurality of unit pixels arranged in a matrix, and each of the unit pixels includes a photodiode which performs photoelectric conversion on light so as to convert the light into an electric signal, a top lens which collects incident light, and an intralayer lens which collects, to the photodiode, the incident light collected by the top lens, and a centroid of the photodiode is displaced from a center of the unit pixel into a first direction, the top lens is formed into an asymmetric shape so as to have a centroid displaced from the center of the unit pixel into the first direction, and the intralayer lens is formed to have a centroid displaced from the center of the unit pixel into the first direction.

摘要翻译： 根据本发明的实施方式的固态成像装置是包括以矩阵形式排列的多个单位像素的固态成像装置，并且每个单位像素包括在光上进行光电转换的光电二极管，以便 将光转换为电信号，收集入射光的顶部透镜以及聚光透镜中的由顶部透镜收集的入射光的内部透镜，并且光电二极管的质心从单元的中心位移 像素进入第一方向，顶部透镜被形成为不对称形状，以使得具有从单位像素的中心向第一方向偏移的质心，并且层内透镜形成为具有从中心位移的质心 单位像素进入第一个方向。

公开(公告)号：US20090140261A1

公开(公告)日：2009-06-04

申请号：US12326249

申请日：2008-12-02

申请人： Kosaku Saeki

发明人： Kosaku Saeki

IPC分类号： H01L31/112 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14687

摘要： A sidewall film 121 in a digital portion has a multilayer structure including at least an offset sidewall film 107b located inside. An extension diffusion layer 110 is formed adjacent to a source/drain diffusion region 111 through the offset sidewall film 107b and a gate electrode 102 as a mask. Thus, an operation speed of the digital portion can be increased with a manufacturing process controlled. For a pixel portion, an antireflection film 122 of a laminate structure is formed simultaneously with formation of the sidewall film 121. Thus, the antireflection film thickness can be optimized with the manufacturing process controlled. As a result, a high sensitive MOS solid-state image device can be provided.

摘要翻译： 数字部分中的侧壁膜121具有至少包括位于内部的偏移侧壁膜107b的多层结构。 延伸扩散层110通过偏置侧壁膜107b和栅电极102作为掩模形成在与源极/漏极扩散区域111相邻的位置。 因此，可以在制造过程受控的情况下增加数字部分的操作速度。 对于像素部分，在形成侧壁膜121的同时形成层叠结构的抗反射膜122.因此，可以在制造过程受控的情况下优化抗反射膜厚度。 结果，可以提供高灵敏度的MOS固体图像器件。