公开(公告)号：US20120228635A1

公开(公告)日：2012-09-13

申请号：US13409820

申请日：2012-03-01

申请人： Makoto MIZUKAMI ,  Masamu Kamaga ,  Kazuto Takao

发明人： Makoto MIZUKAMI ,  Masamu Kamaga ,  Kazuto Takao

IPC分类号： H01L29/161

CPC分类号： H01L29/868 ,  H01L29/1608

摘要： A semiconductor rectifier device using an SiC semiconductor at least includes: an anode electrode; an anode area that adjoins the anode electrode and is made of a second conductivity type semiconductor; a drift layer that adjoins the anode area and is made of a first conductivity type semiconductor having a low concentration; a minority carrier absorption layer that adjoins the drift layer and is made of a first conductivity type semiconductor having a higher concentration than that of the drift layer; a high-resistance semiconductor area that adjoins the minority carrier absorption layer, has less thickness than the drift layer and is made of a first conductivity type semiconductor having a concentration lower than that of the minority carrier absorption layer; a cathode contact layer that adjoins the semiconductor area; and a cathode electrode.

摘要翻译： 使用SiC半导体的半导体整流装置至少包括：阳极电极; 邻接阳极电极并由第二导电型半导体制成的阳极区域; 漂移层，其邻接阳极区域并由具有低浓度的第一导电型半导体制成; 与漂移层相邻并且由比漂移层的浓度高的第一导电型半导体制成的少数载流子吸收层; 与少数载流子吸收层相邻的高电阻半导体区域的厚度小于漂移层的厚度，并且由具有低于少数载流子吸收层的浓度的第一导电型半导体构成; 邻接半导体区域的阴极接触层; 和阴极电极。

公开(公告)号：US08648447B2

公开(公告)日：2014-02-11

申请号：US13409820

申请日：2012-03-01

申请人： Makoto Mizukami ,  Masamu Kamaga ,  Kazuto Takao

发明人： Makoto Mizukami ,  Masamu Kamaga ,  Kazuto Takao

IPC分类号： H01L29/868

CPC分类号： H01L29/868 ,  H01L29/1608

摘要： A semiconductor rectifier device using an SiC semiconductor at least includes: an anode electrode; an anode area that adjoins the anode electrode and is made of a second conductivity type semiconductor; a drift layer that adjoins the anode area and is made of a first conductivity type semiconductor having a low concentration; a minority carrier absorption layer that adjoins the drift layer and is made of a first conductivity type semiconductor having a higher concentration than that of the drift layer; a high-resistance semiconductor area that adjoins the minority carrier absorption layer, has less thickness than the drift layer and is made of a first conductivity type semiconductor having a concentration lower than that of the minority carrier absorption layer; a cathode contact layer that adjoins the semiconductor area; and a cathode electrode.

摘要翻译： 使用SiC半导体的半导体整流装置至少包括：阳极电极; 邻接阳极电极并由第二导电型半导体制成的阳极区域; 漂移层，其邻接阳极区域并由具有低浓度的第一导电型半导体制成; 与漂移层相邻并且由比漂移层的浓度高的第一导电型半导体制成的少数载流子吸收层; 与少数载流子吸收层相邻的高电阻半导体区域的厚度小于漂移层的厚度，并且由具有低于少数载流子吸收层的浓度的第一导电型半导体构成; 邻接半导体区域的阴极接触层; 和阴极电极。

公开(公告)号：US08841741B2

公开(公告)日：2014-09-23

申请号：US13226883

申请日：2011-09-07

申请人： Masamu Kamaga ,  Makoto Mizukami ,  Takashi Shinohe

发明人： Masamu Kamaga ,  Makoto Mizukami ,  Takashi Shinohe

IPC分类号： H01L31/102 ,  H01L29/66 ,  H01L29/861 ,  H01L29/06

CPC分类号： H01L29/0615 ,  H01L29/0692 ,  H01L29/6609 ,  H01L29/8613

摘要： A high breakdown voltage diode of the present embodiment includes a first conductive semiconductor substrate, a drift layer formed on the first conductive semiconductor substrate and formed of a first conductive semiconductor, a buffer layer formed on the drift layer and formed of a second conductive semiconductor, a second conductive high concentration semiconductor region formed at an upper portion of the buffer layer, a mesa termination unit formed on an end region of a semiconductor apparatus to relax an electric field of the end region when reverse bias is applied between the semiconductor substrate and the buffer layer, and an electric field relaxation region formed at the mesa termination unit and formed of a second conductive semiconductor.A breakdown voltage of a high breakdown voltage diode, in which a pn junction is provided to a semiconductor layer, is increased, and a process yield is improved.

摘要翻译： 本实施例的高击穿电压二极管包括第一导电半导体衬底，形成在第一导电半导体衬底上并由第一导电半导体形成的漂移层，形成在漂移层上并由第二导电半导体形成的缓冲层， 形成在缓冲层的上部的第二导电性高浓度半导体区域，形成在半导体装置的端部区域上的台面终端单元，用于在半导体基板与半导体基板之间施加反向偏压时使末端区域的电场松弛 缓冲层和形成在台面终端单元处并由第二导电半导体形成的电场弛豫区域。 提供了将pn结提供给半导体层的高击穿电压二极管的击穿电压，并且提高了工艺成品率。

公开(公告)号：US20120223332A1

公开(公告)日：2012-09-06

申请号：US13215410

申请日：2011-08-23

申请人： Masamu Kamaga ,  Makoto Mizukami

发明人： Masamu Kamaga ,  Makoto Mizukami

IPC分类号： H01L29/24

CPC分类号： H01L29/861 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A semiconductor rectifying device of an embodiment includes a first-conductive-type semiconductor substrate made of a wide bandgap semiconductor, a first-conductive-type semiconductor layer formed on an upper surface of the semiconductor substrate and made of the wide bandgap semiconductor having an impurity concentration lower than that of the semiconductor substrate, a first-conductive-type first semiconductor region formed at a surface of the semiconductor layer and made of the wide bandgap semiconductor, a second-conductive-type second semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor, a second-conductive-type third semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor having a junction depth deeper than a junction depth of the second semiconductor region, a first electrode that is formed on the first, second, and third semiconductor regions, and a second electrode formed on a lower surface of the semiconductor substrate.

摘要翻译： 实施例的半导体整流装置包括由宽带隙半导体构成的第一导电型半导体衬底，形成在半导体衬底的上表面上并由具有杂质的宽带隙半导体制成的第一导电型半导体层 浓度低于半导体衬底的第一导电型第一半导体区域，形成在半导体层的表面并由宽带隙半导体形成的第一导电型第一半导体区域，形成在第一半导体区域周围的第二导电型第二半导体区域和 由宽带隙半导体制成的第二导电型第三半导体区域，形成在第一半导体区域周围并由具有比第二半导体区域的结深度更深的结深度的宽带隙半导体制成的第二导电型第三半导体区域，形成的第一电极 在第一，第二和第三半导体区域上，以及第二电极形式 在半导体衬底的下表面上。

公开(公告)号：US08502237B2

公开(公告)日：2013-08-06

申请号：US13215410

申请日：2011-08-23

申请人： Masamu Kamaga ,  Makoto Mizukami

发明人： Masamu Kamaga ,  Makoto Mizukami

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/861 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/872

摘要： A semiconductor rectifying device of an embodiment includes a first-conductive-type semiconductor substrate made of a wide bandgap semiconductor, a first-conductive-type semiconductor layer formed on an upper surface of the semiconductor substrate and made of the wide bandgap semiconductor having an impurity concentration lower than that of the semiconductor substrate, a first-conductive-type first semiconductor region formed at a surface of the semiconductor layer and made of the wide bandgap semiconductor, a second-conductive-type second semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor, a second-conductive-type third semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor having a junction depth deeper than a junction depth of the second semiconductor region, a first electrode that is formed on the first, second, and third semiconductor regions, and a second electrode formed on a lower surface of the semiconductor substrate.

摘要翻译： 实施例的半导体整流装置包括由宽带隙半导体构成的第一导电型半导体衬底，形成在半导体衬底的上表面上并由具有杂质的宽带隙半导体制成的第一导电型半导体层 浓度低于半导体衬底的第一导电型第一半导体区域，形成在半导体层的表面并由宽带隙半导体形成的第一导电型第一半导体区域，形成在第一半导体区域周围的第二导电型第二半导体区域和 由宽带隙半导体制成的第二导电型第三半导体区域，形成在第一半导体区域周围并由具有比第二半导体区域的结深度更深的结深度的宽带隙半导体制成的第二导电型第三半导体区域，形成的第一电极 在第一，第二和第三半导体区域上，以及第二电极形式 在半导体衬底的下表面上。

公开(公告)号：US08638134B2

公开(公告)日：2014-01-28

申请号：US13222510

申请日：2011-08-31

申请人： Kazuto Takao ,  Masamu Kamaga

发明人： Kazuto Takao ,  Masamu Kamaga

IPC分类号： H03K3/00

CPC分类号： H03K17/162 ,  H01L2924/0002 ,  H02M7/538 ,  H03K2217/0036 ,  H01L2924/00

摘要： A gate drive circuit capable of operating at high speed and with low loss without erroneously operating the switching element is provided with a small number of components and a simple and easy circuit configuration. A primary side of a transformer is connected to an output terminal of a low-side gate drive circuit, and a secondary side of the transformer is connected to a gate input side of a high-side switching element. As a positive gate drive voltage is output from the low-side drive circuit, a negative voltage is applied between the gate and source of a high-side switching element, and a gate voltage is suppressed to be equal to or lower than a threshold value. Therefore, the high-side switching element maintains a turn-off state when the low-side switching element is turned on.

摘要翻译： 能够以高速和低损耗运行而不会错误地操作开关元件的栅极驱动电路具有少量的部件和简单且容易的电路配置。 变压器的初级侧连接到低侧栅极驱动电路的输出端，并且变压器的次级侧连接到高侧开关元件的栅极输入侧。 由于从低侧驱动电路输出正栅极驱动电压，在高侧开关元件的栅极和源极之间施加负电压，并且将栅极电压抑制在等于或低于阈值 。 因此，当低侧开关元件接通时，高侧开关元件保持断开状态。

公开(公告)号：US20090195068A1

公开(公告)日：2009-08-06

申请号：US12320355

申请日：2009-01-23

申请人： Hiromichi Ohashi ,  Yukihiko Sato ,  Kyungmin Sung ,  Masamu Kamaga ,  Moe Imaizumi

发明人： Hiromichi Ohashi ,  Yukihiko Sato ,  Kyungmin Sung ,  Masamu Kamaga ,  Moe Imaizumi

IPC分类号： H02J7/34

CPC分类号： H03K17/162 ,  H02M1/08 ,  H02M7/487 ,  H03K17/102 ,  H03K2217/0081 ,  Y10T307/305 ,  Y10T307/747

摘要： To realize power supply to each gate drive circuit without using an individual dedicated power supply for each gate drive circuit. A power conversion apparatus includes an individual drive unit that does not require a dedicated power supply, and includes gate drivers connected to switches and interface circuits and a power converter gate drive configured with a common power supply for supplying power to the gate drive unit. Power is supplied from main circuits or a number of common power supplies fewer than that of the number of the switches through one or more power supply terminals included in the interface circuit. Also, the signal can be transmitted by isolation from a signal source to the gate drivers.

摘要翻译： 为每个栅极驱动电路实现电源供应，而不需要为每个栅极驱动电路使用单独的专用电源。 电力转换装置包括不需要专用电源的单独的驱动单元，并且包括连接到开关和接口电路的栅极驱动器和配置有用于向栅极驱动单元供电的公共电源的功率转换器栅极驱动器。 通过包括在接口电路中的一个或多个电源端子，从主电路或多个公共电源提供的电力少于开关数量的电力。 此外，信号可以通过从信号源到栅极驱动器的隔离来传输。

公开(公告)号：US08363441B2

公开(公告)日：2013-01-29

申请号：US12320355

申请日：2009-01-23

申请人： Hiromichi Ohashi ,  Yukihiko Sato ,  Kyungmin Sung ,  Masamu Kamaga ,  Moe Imaizumi

发明人： Hiromichi Ohashi ,  Yukihiko Sato ,  Kyungmin Sung ,  Masamu Kamaga ,  Moe Imaizumi

IPC分类号： H02M7/5387

CPC分类号： H03K17/162 ,  H02M1/08 ,  H02M7/487 ,  H03K17/102 ,  H03K2217/0081 ,  Y10T307/305 ,  Y10T307/747

摘要： To realize power supply to each gate drive circuit without using an individual dedicated power supply for each gate drive circuit. A power conversion apparatus includes an individual drive unit that does not require a dedicated power supply, and includes gate drivers connected to switches and interface circuits and a power converter gate drive configured with a common power supply for supplying power to the gate drive unit. Power is supplied from main circuits or a number of common power supplies fewer than that of the number of the switches through one or more power supply terminals included in the interface circuit. Also, the signal can be transmitted by isolation from a signal source to the gate drivers.

摘要翻译： 为每个栅极驱动电路实现电源供应，而不需要为每个栅极驱动电路使用单独的专用电源。 电力转换装置包括不需要专用电源的单独的驱动单元，并且包括连接到开关和接口电路的栅极驱动器和配置有用于向栅极驱动单元供电的公共电源的功率转换器栅极驱动器。 通过包括在接口电路中的一个或多个电源端子，从主电路或多个公共电源提供的电力少于开关数量的电力。 此外，信号可以通过从信号源到栅极驱动器的隔离来传输。

公开(公告)号：US20100067264A1

公开(公告)日：2010-03-18

申请号：US12506535

申请日：2009-07-21

申请人： Hiromichi OHASHI ,  Kyungmin Sung ,  Masamu Kamaga ,  Mitsuaki Shimizu

发明人： Hiromichi OHASHI ,  Kyungmin Sung ,  Masamu Kamaga ,  Mitsuaki Shimizu

IPC分类号： H02M5/44

CPC分类号： H02M5/4585 ,  H02M5/271

摘要： Provided is a power conversion apparatus in which a main circuit is provided with a plurality of switches, and power conversion is performed to generate power for supply to a three-phase AC load from a three- or single-phase AC power supply. At least some of the plurality of switches are configured, using a bidirectional switch including a normally-on device that is turned OFF when a gate circuit is provided with either a positive or negative voltage, and a normally-off device that is turned ON when the gate circuit is provided with either a positive or negative voltage, to provide only a specific unidirectional current flow when the gate circuit is not activated, and when the gate circuit is activated, provide a bidirectional current flow and control the current flow to direct only in an arbitrary unidirectional way. By providing the power conversion apparatus with a capability of directing back, to a load such as motor, any power coming therefrom, the resulting power conversion apparatus requires no direct-current link capacitor and a diode clamping circuit.

摘要翻译： 提供一种电力转换装置，其中主电路设置有多个开关，并且执行功率转换以从三相或单相交流电源产生用于向三相AC负载供电的电力。 多个开关中的至少一些被配置为使用双向开关，该双向开关包括当门电路具有正电压或负电压时被断开的常开装置，以及当断开装置被接通时， 栅极电路被提供有正或负电压，以在栅极电路未被激活时仅提供特定的单向电流，并且当门电路被激活时，提供双向电流并且控制电流仅被引导 以任意的单向方式。 通过向电力转换装置提供能够将诸如电动机的负载引导到其中的任何电力的能力转换装置，所得到的电力转换装置不需要直流链路电容器和二极管钳位电路。

公开(公告)号：US08351224B2

公开(公告)日：2013-01-08

申请号：US12506535

申请日：2009-07-21

申请人： Hiromichi Ohashi ,  Kyungmin Sung ,  Masamu Kamaga ,  Mitsuaki Shimizu

发明人： Hiromichi Ohashi ,  Kyungmin Sung ,  Masamu Kamaga ,  Mitsuaki Shimizu

IPC分类号： H02M5/45 ,  H02J3/00

CPC分类号： H02M5/4585 ,  H02M5/271

摘要： A power conversion apparatus includes a main circuit with switches, and performs power conversion to generate power to a three-phase AC load from a three- or single-phase AC power supply. Some of the switches are configured, using a bidirectional switch including a normally-on device that is turned OFF when a gate circuit is provided with a positive or negative voltage, and a normally-off device that is turned ON when the gate circuit is provided with a positive or negative voltage, to provide only a specific unidirectional current flow when the gate circuit is not activated, and when the gate circuit is activated, provide and control a bidirectional current flow to direct only in an arbitrary unidirectional way. By providing the power conversion apparatus with a capability of directing back, to a load (motor), any power coming therefrom, the conversion apparatus requires no direct-current link capacitor and a diode clamping circuit.

摘要翻译： 电力转换装置包括具有开关的主电路，并且进行电力转换以从三相或单相交流电源向三相交流负载产生电力。 一些开关被配置为使用包括在门电路被提供正或负电压时被关断的常开装置的双向开关和当提供门电路时被接通的常关装置 具有正或负电压，仅在门电路未激活时仅提供特定的单向电流，并且当门电路被激活时，提供和控制双向电流仅以任意的单向方式引导。 通过为电力转换装置提供向负载（电动机）提供来自其的任何电力的能力，转换装置不需要直流链路电容器和二极管钳位电路。