摘要:
An elongated image sensor comprises a plurality of light receiving elements of a sandwich structure arranged in a row and wherein a photoconductive layer is sandwiched by a lower electrode and a light-permeable upper electrode. In the image sensor, an overlapped region of the lower and upper electrodes for each of the light receiving elements is made larger in area than a light reception region and the light reception area (sensor area) is defined by a light shielding means or an insulating film having an opening of a predetermined size.
摘要:
An elongated image sensor comprises a plurality of light receiving elements of a sandwich structure arranged in a row and wherein a photoconductive layer is sandwiched by a lower electrode and a light-permeable upper electrode. In the image sensor, an overlapped region of the lower and upper electrodes for each of the light receiving elements is made larger in area than a light reception region and the light reception area (sensor area) is defined by a light shielding means or an insulating film having an opening of a predetermined size.
摘要:
In a sandwich type image sensor having a photoelectric converting portion comprising a photoelectric conductive layer interposed between an upper electrode and a lower electrode, a light-shielding means is provided for selectively covering an end portion of the photoelectric conductive layer so as to be excluded from a light-receiving area of the converting portion. Alternatively, an insulating layer partly blocking the contact between the photoelectric conductive layer and the lower electrode is provided for effectively defining the light-receiving area of the converting portion. In an example where the photoelectric is divided so that it is operable as those of a plurality of sensor elements arranged in a row, a light-shielding means is provided for defining light-receiving areas of the sensor elements, while overlapping areas of the upper and lower electrodes are adjusted for equalizing the stray capacitances of the sensor elements inclusive of their connecting portions.
摘要:
An image reader including: a scanning mechanism section for holding an imaging optical unit and a solid-state image pick-up device, and for rotating the imaging optical unit and the solid-state image pick-up device in an arbitrary direction and another direction orthogonal to that arbitrary direction respectively, so that an original image can be picked up with an arbitrary resolution while being segmented into a plurality of pieces; and a control section for driving the scanning mechanism section in accordance with the original image and for synthesizing the segmented image to produce original image data. As a result of this construction, the image reader is down-sized and does not require that the original be placed on the platen glass facedown and at a predetermined position, to dispense with the conventionally required complicated operation.
摘要:
A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.
摘要:
A reading apparatus having a photo-detecting element array constituted by a plurality of photo-detecting element blocks each constituted by a plurality of photo-detecting elements, and having switching elements for transferring charges generated in the photo-detecting elements block by block to an output circuit, in which the output circuit has wirings having no crossing portions and the outputs of the photo-detecting elements can be produced as time-series signals without requiring any external memory. In the reading apparatus, the switching elements are selected block by block of the photo-detecting element array, the blocks are commonly connected so that the respective orders of adjacent two of the blocks in the output circuit are opposite to each other, and an output of the output circuit is selected by two selection circuits synchronized with the selection of the switching elements, the two selection circuits respectively having selection orders which are opposite to each other, whereby the selection circuits are switched block by block of the photo-detecting element array to thereby obtain a time-series output.
摘要:
A manuscript reading device for reading a manuscript comprises a plurality of photodiodes for storing electric charges in parasitic capacitances thereof corresponding to lightness-and-darkness information on each minute area of a picture image on the manuscript by way of biasing said photodiodes to a predetermined state, and a plurality of thin film transistors connected in series to associated one of the photodiodes for transferring the electric charges stored in said parasitic capacitances to a corresponding wiring capacitance of a rear wiring group in response to the application of a predetermined voltage to gate electrodes thereof, the electric charges transferred and stored in said wiring capacitance being sequentially outputted as picture information corresponding to said picture image on the manuscript, wherein the thin film transistor comprises an n-type thin film transistor to a gate electrode of which a positive voltage is applied, and the photodiode is biased by a positive voltage.
摘要:
Image signals of an original is obtained from a plurality of image sensors and are successively supplied to an output terminal. A switching element is provided for resetting the previous image signal, which adversely causes to produce noises. An image sensor driving device according to the invention is to cancel the noises by the provision of a noise accumulating circuit and a subtracting circuit for subtracting the noises as accumulated in the noise accumulating circuit from the image signal on which the noises are superimposed.
摘要:
An image sensor has blocks of light-receiving elements which are switched by respective associated thin-film transistors. Charges generated in the light-receiving elements are transferred to respective common signal lines through a matrix wiring on a block basis. Capacitor forming lines are formed above the common signal lines in a crossed relationship through an interposed insulating layer to provide a capacitance substantially equal to a source-gate overlap capacitance of each thin-film switching transistor. A voltage signal in an inverse phase relation to a gate control signal is applied to the capacitor forming lines to cancel out coupling of the gate control signal to the potential of the common signal lines.
摘要:
A close-contact image sensing device has at least a plurality of blocks each including the combinations each consisting of a photo sensing element and a photo sensing element select switch connected in series to the photo sensing element, and a common signal line used, when an image signal is read in each block. A read signal flows through the common signal line. An amount of charge as is stored in an equivalent capacitor of the photo sensing element in accordance with an amount of light incident on the photo sensing element, is transferred to a capacitor connected to the common signal line by turning on the photo sensing element select switch. In the image sensing device, a reset switch is connected at one end to a node between the photo sensing element and the photo sensing element select switch, and at the other end to a ground point. A photo sensing element select signal, which is applied to the photo sensing element select switch in a block in which a read operation will be executed, is also applied as a reset signal to the reset switch in a block in which a read operation has been completed, whereby the charge as still left in the photo sensing element after the charge transfer is drained to the ground point.