摘要:
A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.
摘要:
An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要:
An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disclosed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要:
An image reading apparatus is disclosed which improves reading accuracy by eliminating the effect of crosstalk between neighboring signal lines and removing residual charge, which cause residual images, without complicating the configuration of the image processing circuit. The elimination of the crosstalk effect is based on a relational expression among the electric potentials of three adjacent common signal lines, the load capacitances of the lines, and the coupling capacitances between the center line and each of the outer lines. The residual charge removal uses another relational expression among the scan data from a common signal line, the scan data previously supplied from the same common signal line, and the capacitances of the photodiode section and the wiring section.
摘要:
A close-contact image sensing device has at least a plurality of blocks each including the combinations each consisting of a photo sensing element and a photo sensing element select switch connected in series to the photo sensing element, and a common signal line used, when an image signal is read in each block. A read signal flows through the common signal line. An amount of charge as is stored in an equivalent capacitor of the photo sensing element in accordance with an amount of light incident on the photo sensing element, is transferred to a capacitor connected to the common signal line by turning on the photo sensing element select switch. In the image sensing device, a reset switch is connected at one end to a node between the photo sensing element and the photo sensing element select switch, and at the other end to a ground point. A photo sensing element select signal, which is applied to the photo sensing element select switch in a block in which a read operation will be executed, is also applied as a reset signal to the reset switch in a block in which a read operation has been completed, whereby the charge as still left in the photo sensing element after the charge transfer is drained to the ground point.
摘要:
Disclosed is a color image sensor of the type that reads color images with the aid of filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate. The color image sensor includes a substrate, light-receiving devices formed on the substrate, thin-film transistors that are connected to the light-receiving devices and that are formed on the substrate, an insulating layer that covers the thin-film transistors and the light-receiving devices, a color filter formed on the insulating layer in such a position that it covers the light-receiving devices, and a light-shielding layer formed on the insulating layer in such a position that it covers the thin-film transistors.
摘要:
An image sensor is reduced in size by combining a photoelectric conversion element with a transfer element thin film transistor (TFT). The photoelectric conversion element comprises a lamination including a metal electrode, a photoconductive layer and a transparent electrode. The TFT transfer element comprises a gate electrode, a drain electrode and a source electrode. In the image sensor, the metal electrode of the photoelectric conversion element also serves as the drain electrode of the TFT. In addition, the gate electrode is formed around the photoelectric conversion element, and the source electrode is formed around the gate electrode.
摘要:
An image sensor comprises photo sensing elements, having charge storage capability, for transducing received light into electrical quantities. First switching elements have charge storage capability for transferring the charge stored in the photo sensing elements. Second switching elements have charge storage capability for resetting the photo sensing elements by removing the charge still left in the photo sensing elements after the charge transfer. The image sensor further comprises a first gate pulse generator for generating a first pulse signal to be applied to the first switching elements, and a second gate pulse generator for generating a second pulse signal to be applied to the second switching elements, the amplitude of the second pulse signal being different from that of the first pulse signal. The potential applied to the source electrodes of the second switching elements is different from ground potential.
摘要:
An image reading device comprises a number of photoelectric conversion elements arrayed in the main scan direction so as to generate charges corresponding to optical density information of each extremely small area of an image on an original, and thin film transistors respectively connected in series with those photoelectric conversion elements, conduction of each thin film transistors being controlled by a preset voltage applied to the gate electrode thereof, and additional capacitor portions that are located closer to the photoelectric conversion elements with respect to the thin film transistors. The charges generated in the photoelectric conversion elements are stored in the stray capacitors of the photoelectric conversion elements, the overlap capacitors of the thin film transistors, and the additional capacitor portion.
摘要:
A position measurement system, includes: a plurality of concentric pattern projectors each for projecting a concentric pattern; an image sensor that has a sensor plane and that detects the concentric pattern; and an arithmetic unit that calculates a position of the image sensor and a normal direction of the sensor plane from a detection signal of the image sensor.