公开(公告)号：US20120064462A1

公开(公告)日：2012-03-15

申请号：US13229615

申请日：2011-09-09

Applicant: Mark J. WILLEY ,  Hyosang LEE

Inventor： Mark J. WILLEY ,  Hyosang LEE

IPC: C25D3/38 ,  G03F7/20 ,  C25B15/02 ,  C25D5/54 ,  C25D5/34

CPC classification number: H01L21/76898 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  C25D21/04 ,  C25D21/12 ,  H01L21/2885

Abstract: Methods, systems, and apparatus for plating a metal onto a work piece with a plating solution having a low oxygen concentration are described. In one aspect, a method includes reducing an oxygen concentration of a plating solution. The plating solution includes about 10 parts per million or less of an accelerator and about 300 parts per million or less of a suppressor. After reducing the oxygen concentration of the plating solution, a wafer substrate is contacted with the plating solution in a plating cell. The oxygen concentration of the plating solution in the plating cell is about 1 part per million or less. A metal is then electroplated onto the wafer substrate in the plating cell.

Abstract translation: 描述了用具有低氧浓度的电镀液将金属电镀到工件上的方法，系统和装置。 在一个方面，一种方法包括降低电镀溶液的氧浓度。 电镀溶液包含约10ppm或更少的促进剂，约300ppm或更少的抑制剂。 在降低电镀液的氧浓度后，将晶片基板与电镀液中的电镀液接触。 电镀液中电镀液的氧浓度约为百万分之一以下。 然后将金属电镀到电镀单元中的晶片衬底上。