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1.发明授权Metal heater for in situ heating and crystallization of ferroelectric polymer memory film 失效金属加热器用于铁电聚合物记忆膜的原位加热和结晶公开(公告)号：US07173842B2
公开(公告)日：2007-02-06
申请号：US10816260
申请日：2004-03-31
IPC分类号： G11C11/22
CPC分类号： H01L23/345 , G11C11/22 , H01L27/11502 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of the invention provides an on-chip heating system to both initially anneal and revive cycle-fatigued polymer ferroelectric materials utilized in memory devices. By heating the polymer ferroelectric material above its Curie temperature, the polymer ferroelectric material can crystallize as it cools. As such, the ferroelectric properties of the polymer are enhanced and/or restored.
摘要翻译： 本发明的一个实施例提供一种片上加热系统，用于初始退火和恢复在存储器件中使用的循环疲劳的聚合物铁电材料。 通过将聚合物铁电材料加热到高于其居里温度，聚合物铁电材料可以在其冷却时结晶。 因此，提高和/或恢复聚合物的铁电性能。
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公开(公告)号：US07170122B2
公开(公告)日：2007-01-30
申请号：US10676795
申请日：2003-09-30
IPC分类号： H01L27/10
摘要： According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.
摘要翻译： 根据本发明的一个方面，提供了存储器阵列和构造存储器阵列的方法。 绝缘层形成在半导体衬底上。 然后在绝缘层上形成第一金属叠层。 第一金属叠层被蚀刻以形成第一金属线。 在第一金属线和绝缘层之上形成聚合物层。 聚合物层具有多个粗糙结构的表面。 在聚合物层上形成第二金属叠层，其界面层比粗糙结构层的高度厚。 然后蚀刻第二金属叠层以形成第二金属线。 存储单元形成在第二金属线在第一金属线上延伸的地方。
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公开(公告)号：US07223613B2
公开(公告)日：2007-05-29
申请号：US11015841
申请日：2004-12-17
IPC分类号： H01L21/47
摘要： According to one aspect of the invention, a memory array and a method of constructing a memory array are provided. An insulating layer is formed on a semiconductor substrate. A first metal stack is then formed on the insulating layer. The first metal stack is etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. The polymeric layer has a surface with a plurality of roughness formations. A second metal stack is formed on the polymeric layer with an interface layer, which is thicker than the heights of the roughness formations. Then the second metal stack is etched to form second metal lines. Memory cells are formed wherever a second metal line extends over a first metal line.
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