Stable rare-earth alloy graded junction contact devices using III-V type
substrates
    2.
    发明授权
    Stable rare-earth alloy graded junction contact devices using III-V type substrates 失效
    使用III-V型衬底的稳定的稀土合金渐变接点器件

    公开(公告)号:US4847675A

    公开(公告)日:1989-07-11

    申请号:US48103

    申请日:1987-05-07

    申请人: Genghmun Eng

    发明人: Genghmun Eng

    IPC分类号: H01L29/45

    CPC分类号: H01L29/452

    摘要: A coating is disclosed for use with GaAs and other Type III-V semiconductor substrates, comprised of a rare-earth element or elements and a non-rare-earth element or elements, that forms an improved graded junction which is thermally stable, has satisfactory electrical properties and is resistant to the through migration of Ga or As.

    摘要翻译: 公开了一种与GaAs和其他III-V族半导体衬底一起使用的涂层,其包括稀土元素和非稀土元素,其形成改进的热稳定的梯度结,具有令人满意的 电性能并且耐Ga或As的通过迁移。