公开(公告)号：US4048349A

公开(公告)日：1977-09-13

申请号：US530018

申请日：1974-12-05

申请人： Martin White ,  Niyom Boonthanoom

发明人： Martin White ,  Niyom Boonthanoom

IPC分类号： H01B1/22 ,  H01C7/04 ,  H01C17/08 ,  B05D5/12 ,  C23C11/00

CPC分类号： H01B1/22 ,  H01C17/08 ,  H01C7/04

摘要： A process is described for producing a composite metal film in which metalliferous particles and polymer particles are co-deposited on a substrate, the proportion of metalliferous particles being such that the metal film is discontinuous, the metal particles being present in the form of islands with intervening zones of polymeric material. The resulting composite films have negative temperature coefficient of resistance. The process may be applied to the production of semiconductor composite films, e.g., copper oxide films by means of an annealing oxidative treatment to convert metal to metal oxide before loss of polymeric matrix by oxidation or evaporation.

摘要翻译： 描述了一种制备复合金属膜的方法，其中金属颗粒和聚合物颗粒共沉积在基底上，金属颗粒的比例使得金属膜不连续，金属颗粒以岛形式存在， 聚合材料的介入区域。 所得到的复合膜具有负的温度系数。 该方法可以应用于半导体复合膜，例如通过退火氧化处理的氧化铜膜的生产，以通过氧化或蒸发在金属氧化物转化之前将金属转化成金属氧化物。