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    Apparatus for continuously producing polyisocyanate
    1.
    发明授权
    Apparatus for continuously producing polyisocyanate 有权
    用于连续生产多异氰酸酯的设备

    公开(公告)号：US07767160B2

    公开(公告)日：2010-08-03

    申请号：US11887583

    申请日：2006-03-30

    申请人： Masaaki Sasaki ,  Kouji Maeba ,  Mitsunaga Douzaki ,  Hirofumi Takahashi ,  Osamu Hososaka

    发明人： Masaaki Sasaki ,  Kouji Maeba ,  Mitsunaga Douzaki ,  Hirofumi Takahashi ,  Osamu Hososaka

    IPC分类号： B01J19/18 ,  C07C211/00

    CPC分类号： C07C263/10 ,  B01F5/0256 ,  B01F5/10 ,  B01F5/16 ,  B01J4/001 ,  B01J19/1881 ,  B01J2219/00096 ,  B01J2219/00108 ,  C07C265/14

    摘要： An apparatus for continuously producing polyisocyanate is provided for quickly contacting polyamine and carbonyl chloride in order to suppress an undesirable reaction between polyamine and polyisocyanate so that a by-product can be reduced and the yield of polyisocyanate can be improved. In a circulatory line 7, a material-mixing portion 8, a high-shear pump 3, a reactor 4, a liquid-feeding pump 5 and a cooler 6 are interposed in series along the direction of the flow of a reaction solution, thereby forming a closed line. In this apparatus 1, after polyamine and carbonyl chloride are supplied in the material-mixing portion 8, the reaction solution is sheared by the high-shear pump 3 in a state where the contact of the polyamine with the reaction solution is minimized. Thus, the formation of a urea compound as a by-product can be suppressed and the yield of polyisocyanate can be improved.

    摘要翻译： 提供连续制备多异氰酸酯的装置，用于快速接触多胺和碳酰氯，以抑制多胺和多异氰酸酯之间不期望的反应，从而可以降低副产物并提高多异氰酸酯的产率。 在循环管线7中，沿着反应溶液的流动方向串联插入材料混合部分8，高剪切力泵3，反应器4，送液泵5和冷却器6，由此 形成封闭线。 在该装置1中，在物料混合部分8中供给多胺和碳酰氯之后，在多胺与反应溶液的接触最小化的状态下，通过高剪切泵3剪切反应溶液。 因此，可以抑制作为副产物的尿素化合物的形成，并且可以提高多异氰酸酯的收率。

    Apparatus for Continuously Producing Polyisocyanate
    2.
    发明申请
    Apparatus for Continuously Producing Polyisocyanate 有权
    用于连续生产多异氰酸酯的设备

    公开(公告)号：US20090081086A1

    公开(公告)日：2009-03-26

    申请号：US11887583

    申请日：2006-03-30

    申请人： Masaaki Sasaki ,  Kouji Maeba ,  Mitsunaga Douzaki ,  Hirofumi Takahashi ,  Osamu Hososaka

    发明人： Masaaki Sasaki ,  Kouji Maeba ,  Mitsunaga Douzaki ,  Hirofumi Takahashi ,  Osamu Hososaka

    IPC分类号： B01J19/18

    CPC分类号： C07C263/10 ,  B01F5/0256 ,  B01F5/10 ,  B01F5/16 ,  B01J4/001 ,  B01J19/1881 ,  B01J2219/00096 ,  B01J2219/00108 ,  C07C265/14

    摘要： An apparatus for continuously producing polyisocyanate is provided for quickly contacting polyamine and carbonyl chloride in order to suppress an undesirable reaction between polyamine and polyisocyanate so that a by-product can be reduced and the yield of polyisocyanate can be improved. In a circulatory line 7, a material-mixing portion 8, a high-shear pump 3, a reactor 4, a liquid-feeding pump 5 and a cooler 6 are interposed in series along the direction of the flow of a reaction solution, thereby forming a closed line. In this apparatus 1, after polyamine and carbonyl chloride are supplied in the material-mixing portion 8, the reaction solution is sheared by the high-shear pump 3 in a state where the contact of the polyamine with the reaction solution is minimized. Thus, the formation of a urea compound as a by-product can be suppressed and the yield of polyisocyanate can be improved.

    摘要翻译： 提供连续制备多异氰酸酯的装置，用于快速接触多胺和碳酰氯，以抑制多胺和多异氰酸酯之间不期望的反应，从而可以降低副产物并提高多异氰酸酯的产率。 在循环管线7中，沿着反应溶液的流动方向串联插入材料混合部分8，高剪切力泵3，反应器4，送液泵5和冷却器6，由此 形成封闭线。 在该装置1中，在物料混合部分8中供给多胺和碳酰氯之后，在多胺与反应溶液的接触最小化的状态下，通过高剪切泵3剪切反应溶液。 因此，可以抑制作为副产物的尿素化合物的形成，并且可以提高多异氰酸酯的收率。

    Polyisocyanate production system and gas treatment apparatus
    7.
    发明授权
    Polyisocyanate production system and gas treatment apparatus 有权
    多异氰酸酯生产系统和气体处理设备

    公开(公告)号：US07718145B2

    公开(公告)日：2010-05-18

    申请号：US11597756

    申请日：2006-03-17

    申请人： Masaaki Sasaki ,  Hirofumi Takahashi ,  Kouji Maeba ,  Takao Naito ,  Kouichirou Terada ,  Takashi Yamaguchi ,  Takuya Saeki

    发明人： Masaaki Sasaki ,  Hirofumi Takahashi ,  Kouji Maeba ,  Takao Naito ,  Kouichirou Terada ,  Takashi Yamaguchi ,  Takuya Saeki

    IPC分类号： B01J8/00 ,  B01J10/00 ,  C07C205/00 ,  C07C207/00

    CPC分类号： C01B7/0725 ,  B01D53/18 ,  B01D53/68 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2257/2045 ,  C01B7/04 ,  C07C263/10 ,  C07C265/14

    摘要： A polyisocyanate production system is provided that can stably produce chlorine from hydrogen chloride produced secondarily while reacting stably between carbonyl chloride and polyamine and can perform an effective treatment of the hydrochloric gas produced secondarily. A hydrochloric gas control unit 32 controls a flow-rate control valve 23 to keep constant an amount of hydrogen chloride supplied from a hydrogen chloride purifying tank 4 to a hydrogen chloride oxidation reactor 6 via a second hydrochloric-gas connection line 11 to be constant, and also controls a pressure control valve 22 based on an inner pressure of the hydrogen chloride purifying tank 4 input from a pressure sensor 25 to discharge the hydrochloric gas from the hydrogen chloride purifying tank 4 to the hydrogen chloride absorbing column 5 via a first hydrochloric-gas connection line 10, so as to keep an inner pressure of the hydrogen chloride purifying tank 4 to be constant.

    摘要翻译： 提供了一种多异氰酸酯生产系统，其能够在氯化碳和多胺之间稳定反应的同时使氯化氢稳定地产生氯，同时可以对二次生成的盐酸进行有效的处理。 盐酸气体控制单元32控制流量控制阀23，使得从氯化氢净化槽4经由第二盐酸气体连接管线11将氯化氢供给到氯化氢氧化反应器6的量恒定， 并且还基于从压力传感器25输入的氯化氢净化槽4的内部压力来控制压力控制阀22，以通过第一盐酸盐排出氯化氢净化槽4的氯化氢气体到氯化氢吸收塔5。 气体连接管线10，以使氯化氢净化槽4的内部压力保持恒定。

    Polyisocyanate Production System and Gas Treatment Apparatus
    8.
    发明申请
    Polyisocyanate Production System and Gas Treatment Apparatus 有权
    多异氰酸酯生产系统和气体处理设备

    公开(公告)号：US20080138252A1

    公开(公告)日：2008-06-12

    申请号：US11597756

    申请日：2006-03-17

    申请人： Masaaki Sasaki ,  Hirofumi Takahashi ,  Kouji Maeba ,  Takao Naito ,  Kouichirou Terada ,  Takashi Yamaguchi ,  Takuya Saeki

    发明人： Masaaki Sasaki ,  Hirofumi Takahashi ,  Kouji Maeba ,  Takao Naito ,  Kouichirou Terada ,  Takashi Yamaguchi ,  Takuya Saeki

    IPC分类号： B01J19/00

    CPC分类号： C01B7/0725 ,  B01D53/18 ,  B01D53/68 ,  B01D2251/304 ,  B01D2251/306 ,  B01D2257/2045 ,  C01B7/04 ,  C07C263/10 ,  C07C265/14

    摘要： A polyisocyanate production system is provided that can stably produce chlorine from hydrogen chloride produced secondarily while reacting stably between carbonyl chloride and polyamine and can perform an effective treatment of the hydrochloric gas produced secondarily. A hydrochloric gas control unit 32 controls a flow-rate control valve 23 to keep constant an amount of hydrogen chloride supplied from a hydrogen chloride purifying tank 4 to a hydrogen chloride oxidation reactor 6 via a second hydrochloric-gas connection line 11 to be constant, and also controls a pressure control valve 22 based on an inner pressure of the hydrogen chloride purifying tank 4 input from a pressure sensor 25 to discharge the hydrochloric gas from the hydrogen chloride purifying tank 4 to the hydrogen chloride absorbing column 5 via a first hydrochloric-gas connection line 10, so as to keep an inner pressure of the hydrogen chloride purifying tank 4 to be constant.

    摘要翻译： 提供了一种多异氰酸酯生产系统，其能够在氯化碳和多胺之间稳定反应的同时使氯化氢稳定地产生氯，同时可以对二次生成的盐酸进行有效的处理。 盐酸气体控制单元32控制流量控制阀23，使得从氯化氢净化槽4经由第二盐酸气体连接管线11将氯化氢供给到氯化氢氧化反应器6的量恒定， 并且还基于从压力传感器25输入的氯化氢净化槽4的内部压力来控制压力控制阀22，以通过第一盐酸盐排出氯化氢净化槽4的氯化氢气体到氯化氢吸收塔5。 气体连接管线10，以使氯化氢净化槽4的内部压力保持恒定。

    Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion
    10.
    发明授权
    Copper anode or phosphorous-containing copper anode, method of electroplating copper on semiconductor wafer, and semiconductor wafer with low particle adhesion 有权
    铜阳极或含磷铜阳极，在半导体晶片上电镀铜的方法，以及具有低颗粒粘附性的半导体晶片

    公开(公告)号：US08216438B2

    公开(公告)日：2012-07-10

    申请号：US12524623

    申请日：2008-10-06

    申请人： Akihiro Aiba ,  Hirofumi Takahashi

    发明人： Akihiro Aiba ,  Hirofumi Takahashi

    IPC分类号： C25B11/04

    CPC分类号： C22C9/00 ,  C25D7/12 ,  C25D17/10

    摘要： Provided is a copper anode or a phosphorous-containing copper anode for use in performing electroplating copper on a semiconductor wafer, wherein purity of the copper anode or the phosphorous-containing copper anode excluding phosphorous is 99.99 wt % or higher, and silicon as an impurity is 10 wtppm or less. Additionally provided is an electroplating copper method capable of effectively preventing the adhesion of particles on a plating object, particularly onto a semiconductor wafer during electroplating copper, a phosphorous-containing copper anode for use in such electroplating copper, and a semiconductor wafer comprising a copper layer with low particle adhesion formed by the foregoing copper electroplating.

    摘要翻译： 提供一种用于在半导体晶片上进行电镀铜的铜阳极或含磷铜阳极，其中铜阳极或不含磷的含磷铜阳极的纯度为99.99重量％以上，硅为杂质 为10重量ppm以下。 另外提供了一种电镀铜方法，其能够有效地防止电镀对象，特别是在电镀铜期间的半导体晶片上的颗粒附着，用于这种电镀铜的含磷铜阳极，以及包含铜层的半导体晶片 具有由上述铜电镀形成的低颗粒粘附。