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公开(公告)号：US07374614B2
公开(公告)日：2008-05-20
申请号：US10588750
申请日：2005-02-18
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068 , Y10T117/1072
摘要： The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.
摘要翻译： 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。
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公开(公告)号：US20070131158A1
公开(公告)日：2007-06-14
申请号：US10588750
申请日：2005-02-18
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1068 , Y10T117/1072
摘要： The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.
摘要翻译： 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。
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