公开(公告)号：US07374614B2

公开(公告)日：2008-05-20

申请号：US10588750

申请日：2005-02-18

申请人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

发明人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

IPC分类号： C30B15/20

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.

摘要翻译： 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。

公开(公告)号：US20070131158A1

公开(公告)日：2007-06-14

申请号：US10588750

申请日：2005-02-18

申请人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

发明人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

IPC分类号： C30B15/00 ,  C30B19/00 ,  C30B21/06

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.

摘要翻译： 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。

公开(公告)号：US5899743A

公开(公告)日：1999-05-04

申请号：US705155

申请日：1996-08-29

申请人： Fumitaka Kai ,  Masahiko Maeda ,  Jun-ichi Yamashita ,  Toshiharu Yubitani ,  Hirofumi Hajime ,  Takamitsu Harada

发明人： Fumitaka Kai ,  Masahiko Maeda ,  Jun-ichi Yamashita ,  Toshiharu Yubitani ,  Hirofumi Hajime ,  Takamitsu Harada

IPC分类号： B24B37/04 ,  C30B33/00 ,  H01L21/302 ,  H01L21/306 ,  H01L21/304

CPC分类号： H01L21/02008 ,  B24B37/042 ,  B24B37/08 ,  C30B33/00 ,  Y10S438/906 ,  Y10S438/928 ,  Y10S438/974

摘要： A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.

摘要翻译： 公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法 该方法将单晶锭切成晶片。 每个晶片的边缘被倒角。 进行研磨步骤以使倒角晶片平坦化。 然后抛光晶片的两个侧表面。 接下来，晶片表面被镜面抛光。 最后，清洁晶片。

公开(公告)号：US6162730A

公开(公告)日：2000-12-19

申请号：US249142

申请日：1999-02-12

申请人： Fumitaka Kai ,  Masahiko Maeda ,  Jun-ichi Yamashita ,  Toshiharu Yubitani ,  Hirofumi Hajime ,  Takamitsu Harada

发明人： Fumitaka Kai ,  Masahiko Maeda ,  Jun-ichi Yamashita ,  Toshiharu Yubitani ,  Hirofumi Hajime ,  Takamitsu Harada

IPC分类号： B24B1/00 ,  B28D5/00 ,  C30B33/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/461

CPC分类号： H01L21/02008 ,  B24B37/042 ,  B24B37/08 ,  C30B33/00 ,  Y10S438/928 ,  Y10S438/974

摘要： A method for efficiently fabricating semiconductor wafers of good planarization without utilizing chemical solutions of high etching rate is disclosed. The method slices a single-crystal ingot into slices of wafers. The edge of each wafer is chamfered. A lapping or grinding step is carried out to planarize the chamfered wafer. Both side surfaces of the wafer are then polished. Next, the wafer surface is mirror polished. Finally, the wafer is cleaned.

摘要翻译： 公开了一种在不使用高蚀刻速率的化学溶液的情况下有效地制造具有良好平坦化的半导体晶片的方法 该方法将单晶锭切成晶片。 每个晶片的边缘被倒角。 进行研磨或磨削步骤以使倒角晶片平坦化。 然后抛光晶片的两个侧表面。 接下来，晶片表面被镜面抛光。 最后，清洁晶片。

公开(公告)号：US5756399A

公开(公告)日：1998-05-26

申请号：US826226

申请日：1997-03-27

申请人： Hirofumi Hajime ,  Toshiharu Yubitani

发明人： Hirofumi Hajime ,  Toshiharu Yubitani

IPC分类号： B24B9/06 ,  B28D5/00 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L41/22

CPC分类号： H01L21/02008 ,  B24B37/04 ,  B24B37/042 ,  B24B9/065 ,  B28D5/00 ,  H01L21/306 ,  H01L21/67028

摘要： The present invention provides a process for making a semiconductor wafer, including slicing an ingot to obtain wafers; surface-grinding both sides of each of the wafers; etching the wafers with an alkaline solution; chamfering the peripheral portion of each of the wafers; both-side polishing the wafers for mirror processing ; cleaning both sides of each of the wafers to remove the particles attached to the sides; and drying and cleaning the wafers. By employing the present process, the time for polishing the wafer can be shortened, and the semiconductor wafer can be made effectively.

摘要翻译： 本发明提供一种制造半导体晶片的方法，包括切割锭以获得晶片; 表面研磨每个晶片的两面; 用碱性溶液蚀刻晶片; 倒角每个晶片的周边部分; 双面抛光晶圆进行镜面加工; 清洁每个晶片的两侧以除去附着在侧面上的颗粒; 并干燥和清洁晶片。 通过采用本工序，能够缩短晶片的研磨时间，能够有效地制造半导体晶片。

公开(公告)号：US5880027A

公开(公告)日：1999-03-09

申请号：US826227

申请日：1997-03-27

申请人： Hirofumi Hajime ,  Toshiharu Yubitani

发明人： Hirofumi Hajime ,  Toshiharu Yubitani

IPC分类号： H01L21/304 ,  H01L21/306 ,  H01L21/302

CPC分类号： H01L21/02008 ,  H01L21/02052

摘要： The present invention provides a process for fabricating a semiconductor wafer, including surface-grinding both sides of the sliced wafer, and cleaning the surface-ground wafer with an alkaline solution to remove the sharp protruded part. The frictional resistance between the surface-ground wafer and a polishing cloth can be reduced, thus extending a life of a template and the polishing cloth.

摘要翻译： 本发明提供了一种制造半导体晶片的方法，包括在切片晶片的表面研磨两侧，并用碱性溶液清洗表面磨碎的晶片以去除尖锐的突出部分。 可以减少表面磨碎的晶片和抛光布之间的摩擦阻力，从而延长模板和抛光布的寿命。

公开(公告)号：US5873772A

公开(公告)日：1999-02-23

申请号：US831599

申请日：1997-04-10

申请人： Hirofumi Hajime ,  Toshiharu Yubitani

发明人： Hirofumi Hajime ,  Toshiharu Yubitani

IPC分类号： B24B37/08 ,  B24B37/26 ,  B24B1/00 ,  B24B7/22

CPC分类号： B24B37/08 ,  B24B37/26

摘要： A method for polishing a semiconductor wafer is provided. A semiconductor wafer is detached from a polishing pad on a side of an upper polishing plate and is kept to be supported by a lower polishing plate. A contact area between the a wafer and the upper polishing plate is set to be less than a contact area between the wafer and the lower polishing plate. As a result, the wafer is definitely detached from the polishing pad on the side of the upper polishing plate and is to be kept supported by the lower polishing plate when the upper polishing plate is lifted.

摘要翻译： 提供了一种用于抛光半导体晶片的方法。 半导体晶片从上抛光板侧的抛光垫分离，并保持由下抛光板支撑。 晶片和上抛光板之间的接触面积被设定为小于晶片和下抛光板之间的接触面积。 结果，晶片绝对与上抛光板一侧的抛光垫分离，并且当上抛光板被提起时，被下抛光板保持支撑。

公开(公告)号：US5821166A

公开(公告)日：1998-10-13

申请号：US767031

申请日：1996-12-12

申请人： Hirofumi Hajime ,  Toshiharu Yubitani

发明人： Hirofumi Hajime ,  Toshiharu Yubitani

IPC分类号： H01L21/304 ,  H01L21/302

CPC分类号： H01L21/02013 ,  H01L21/02024

摘要： method of manufacturing semiconductor wafers, which can prevent the pendent surface phenomenon during the mirror polishing of the wafers and can enhance the flatness of the mirror polished surfaces. The method of manufacturing semiconductor wafers according to this invention includes slicing ingots into wafers, chamfering the peripheral edge portions of the wafers, lapping the sliced surfaces of the wafers, grinding the lapped surfaces of the wafers to form a gradual concave shape, mirror polishing the ground surfaces of the wafers, and finally cleaning the mirror polished wafers.

摘要翻译： 制造半导体晶片的方法，其可以防止在晶片的镜面抛光期间的侧面现象，并且可以增强镜面抛光表面的平坦度。 根据本发明的制造半导体晶片的方法包括将晶片切成晶片，倒角晶片的周边部分，研磨晶片的切片表面，研磨晶片的重叠表面以形成渐变凹形，将抛光 晶片的接地面，最后清洁镜面抛光的晶片。