-
公开(公告)号：US08135487B2
公开(公告)日：2012-03-13
申请号：US12103276
申请日：2008-04-15
IPC分类号： G06F19/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/67248
摘要： A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.
摘要翻译： 本发明的温度设定方法包括以下步骤：测量用于其后完成了包括热处理和蚀刻处理的一系列光刻处理的基板的蚀刻图案的状态; 使用蚀刻图案的状态的校正量和热处理板的温度校正值之间的函数，从衬底内的蚀刻图案的状态的测量结果计算热处理板的区域的温度校正值; 并且通过计算的每个温度校正值来设定热处理板的每个区域的温度。
-
2.发明授权公开(公告)号：US07957828B2
公开(公告)日：2011-06-07
申请号：US12099970
申请日：2008-04-09
IPC分类号： G06F19/00
CPC分类号： H01L21/67248 , G03F7/70483
摘要： In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.
摘要翻译： 在本发明中，对于其后的光刻处理和蚀刻处理结束的基板测量蚀刻图案的基板内的线宽。 使用预先获得的关系式将线宽测量结果转换成抗蚀剂图案的线宽。 根据抗蚀剂图案的转换线宽，计算表示衬底内的变化的多项式函数的系数。 接下来，使用抗蚀剂图案的线宽校正量和温度校正值之间的函数来计算热板的区域的温度校正值，以使多项式函数的系数接近零。 基于每个计算的温度校正值，设定每个区域的温度。
-
3.发明申请公开(公告)号：US20080257495A1
公开(公告)日：2008-10-23
申请号：US12099970
申请日：2008-04-09
CPC分类号： H01L21/67248 , G03F7/70483
摘要： In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.
摘要翻译： 在本发明中，对于其后的光刻处理和蚀刻处理结束的基板测量蚀刻图案的基板内的线宽。 使用预先获得的关系式将线宽测量结果转换成抗蚀剂图案的线宽。 根据抗蚀剂图案的转换线宽，计算表示衬底内的变化的多项式函数的系数。 接下来，使用抗蚀剂图案的线宽校正量和温度校正值之间的函数来计算热板的区域的温度校正值，以使多项式函数的系数接近零。 基于每个计算的温度校正值，设定每个区域的温度。
-
4.发明授权Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate 有权热处理板的温度设定方法，其上的计算机可读记录介质记录程序和用于热处理板的温度设定装置公开(公告)号：US07968825B2
公开(公告)日：2011-06-28
申请号：US11926808
申请日：2007-10-29
申请人： Megumi Jyousaka , Shinichi Shinozuka , Kunie Ogata
发明人： Megumi Jyousaka , Shinichi Shinozuka , Kunie Ogata
CPC分类号： H01L21/67248
摘要： A thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and an in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. From the calculated plurality of in-plane tendency components, in-plane tendency components improvable by changing the temperature correction values are extracted and added together to calculate an improvable in-plane tendency of the measured line widths within the substrate. The change of setting of the temperature correction value for each of the thermal plate regions of the thermal plate is performed only when the magnitude of the improvable in-plane tendency exceeds a threshold value set in advance.
摘要翻译： 加热单元的热板被分成多个热板区域，并且可以为每个热板区域设定温度。 可以对热板的每个热板区域设定用于调节热板内的温度的温度校正值。 测量经过光刻处理的衬底内的线宽，并且使用Zernike多项式将所测量的线宽的面内趋势分解成多个面内趋势分量。 从计算出的多个面内趋势分量中，提取通过改变温度校正值而改善的面内趋势分量并将其相加在一起，以计算衬底内测量的线宽的可改进的面内趋势。 只有当可提升的平面内趋势的大小超过预先设定的阈值时，才进行热板的每个热板区域的温度校正值的设定的变化。
-
5.发明授权Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate 有权热处理板的温度设定方法，其上的计算机可读记录介质记录程序和用于热处理板的温度设定装置公开(公告)号：US07897896B2
公开(公告)日：2011-03-01
申请号：US11875239
申请日：2007-10-19
申请人： Megumi Jyousaka , Shinichi Shinozuka , Kunie Ogata
发明人： Megumi Jyousaka , Shinichi Shinozuka , Kunie Ogata
IPC分类号： H05B1/02
CPC分类号： G05D23/1931 , H01L21/67248
摘要： In the present invention, a thermal plate of a heating unit is divided into a plurality of thermal plate regions, and a temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting a temperature within the thermal plate can be set for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to a photolithography process are measured, and, from an in-plane tendency of the measured line widths, an in-plane tendency improvable by temperature correction and an unimprovable in-plane tendency are calculated using a Zernike polynomial. An average remaining tendency of the improvable in-plane tendency after improvement obtained in advance is added to the unimprovable in-plane tendency to estimate an in-plane tendency of the line widths within the substrate after change of temperature setting.
摘要翻译： 在本发明中，加热单元的热板被分成多个热板区域，并且可以为每个热板区域设定温度。 可以对热板的每个热板区域设定用于调节热板内的温度的温度校正值。 测量经过光刻工艺的衬底内的线宽，并且根据所测量的线宽的面内趋势，通过温度校正提高的面内趋势和不可估量的面内趋势，使用 一个Zernike多项式。 将预先获得的改进后的面内趋势的平均剩余趋势加到不可估量的平面内趋势中，以估计在温度设定变化之后衬底内线宽的面内趋势。
-
6.发明授权Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate 有权热处理板的温度设定方法，其上的计算机可读记录介质记录程序和用于热处理板的温度设定装置公开(公告)号：US07910863B2
公开(公告)日：2011-03-22
申请号：US11858809
申请日：2007-09-20
IPC分类号： H05B1/02
CPC分类号： H01L21/67109 , G05D23/1932 , H01L21/67748
摘要： A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency.
摘要翻译： PEB单元的热板被分成多个热板区域，并且可以为每个热板区域设置温度。 用于调节热板内的温度的温度校正值可针对热板的每个热板区域而设定。 测量光刻工艺已经完成的衬底内的线宽。 使用泽尔尼克多项式将测量的线宽的平面内趋势分解成多个平面内趋势分量。 然后，从计算出的多个面内趋势分量中提取通过设定温度校正值而可以改善的面内倾向分量，并且相加以计算测量的线宽中的可改进的面内趋势。 然后，从当前处理状态的面内倾向Z中减去可改进的平面内趋势，以计算改进后的平面内趋势。
-
7.发明申请公开(公告)号：US20090008381A1
公开(公告)日：2009-01-08
申请号：US11816191
申请日：2006-02-08
CPC分类号： H01L21/67109 , G03F7/38 , H01L21/67103 , H01L21/67178 , H01L21/67184 , H01L21/67248 , H01L21/67748
摘要： Temperature setting of a thermal plate is performed so that the line width of a resist pattern is uniformly formed within a wafer. The thermal plate of a PEB unit is divided into a plurality of thermal plate regions so that the temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the wafer mounted on the thermal plate is set for each of the thermal plate regions of the thermal plate. The temperature correction value for each of the thermal plate regions of the thermal plate is set after calculation by a calculation model created from a correlation between a line width of the resist pattern formed by thermal processing on the thermal plate and the temperature correction value. The calculation model M calculates the temperature correction value to make the line width uniform within the wafer, based on a line width measured value of the resist pattern.
摘要翻译： 进行热板的温度设定，使得抗蚀剂图案的线宽均匀地形成在晶片内。 PEB单元的热板被分成多个热板区域，以便可以为每个热板区域设定温度。 对于热板的每个热板区域设定用于调节安装在热板上的晶片内的温度的温度校正值。 通过由热板上由热处理形成的抗蚀剂图案的线宽与温度校正值之间的相关性产生的计算模型计算出热板的每个热板区域的温度校正值。 计算模型M基于抗蚀剂图案的线宽测量值计算温度校正值以使晶片内的线宽均匀。
-
8.发明授权公开(公告)号：US07902485B2
公开(公告)日：2011-03-08
申请号：US11816191
申请日：2006-02-08
CPC分类号： H01L21/67109 , G03F7/38 , H01L21/67103 , H01L21/67178 , H01L21/67184 , H01L21/67248 , H01L21/67748
摘要： Temperature setting of a thermal plate is performed so that the line width of a resist pattern is uniformly formed within a wafer. The thermal plate of a PEB unit is divided into a plurality of thermal plate regions so that the temperature can be set for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the wafer mounted on the thermal plate is set for each of the thermal plate regions of the thermal plate. The temperature correction value for each of the thermal plate regions of the thermal plate is set after calculation by a calculation model created from a correlation between a line width of the resist pattern formed by thermal processing on the thermal plate and the temperature correction value. The calculation model M calculates the temperature correction value to make the line width uniform within the wafer, based on a line width measured value of the resist pattern.
摘要翻译： 进行热板的温度设定，使得抗蚀剂图案的线宽均匀地形成在晶片内。 PEB单元的热板被分成多个热板区域，以便可以为每个热板区域设定温度。 对于热板的每个热板区域设定用于调节安装在热板上的晶片内的温度的温度校正值。 通过由热板上由热处理形成的抗蚀剂图案的线宽与温度校正值之间的相关性产生的计算模型计算出热板的每个热板区域的温度校正值。 计算模型M基于抗蚀剂图案的线宽测量值计算温度校正值以使晶片内的线宽均匀。
-
9.发明授权Temperature setting of thermal processing plate using zernike coefficients 有权热处理板的温度设定方法，其上的计算机可读记录介质记录程序和用于热处理板的温度设定装置公开(公告)号：US07715952B2
公开(公告)日：2010-05-11
申请号：US11858784
申请日：2007-09-20
CPC分类号： G05D23/1935
摘要： In the present invention, a thermal plate is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the wafer for which the photolithography process has been finished are first measured, and Zernike coefficients of a Zernike polynomial indicating a plurality of in-plane tendency components are calculated from the measured values of the line widths within the wafer. Then, the temperature correction values for the regions of the thermal plate to bring the calculated Zernike coefficients close to 0 are calculated using a calculation model indicating a correlation between change amounts of the Zernike coefficients and the temperature correction values. The temperature of each of the regions of the thermal plate is set based on each of the calculated temperature correction values.
摘要翻译： 在本发明中，热板被分成多个热板区域，并且可以为每个热板区域设定温度。 用于调节热板内的温度的温度校正值可针对热板的每个热板区域而设定。 首先测量光刻工艺已经完成的晶片内的线宽，并根据晶片内的线宽的测量值计算表示多个面内倾向分量的泽尔尼克多项式的泽尼克系数。 然后，使用表示Zernike系数的变化量与温度校正值之间的相关性的计算模型，计算使热板的区域使温度校正值接近0的温度校正值。 基于每个计算出的温度校正值来设定热板的每个区域的温度。
-
10.发明申请公开(公告)号：US20090078695A1
公开(公告)日：2009-03-26
申请号：US11858809
申请日：2007-09-20
IPC分类号： H05B1/02
CPC分类号： H01L21/67109 , G05D23/1932 , H01L21/67748
摘要： A thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate for which a photolithography process has been finished are measured. The in-plane tendency of the measured line widths is decomposed into a plurality of in-plane tendency components using a Zernike polynomial. Then, in-plane tendency components improvable by setting the temperature correction values are extracted from the calculated plurality of in-plane tendency components and added to calculate an improvable in-plane tendency in the measured line widths. Then, the improvable in-plane tendency is subtracted from the in-plane tendency Z of the current processing states to calculate an after-improvement in-plane tendency.
摘要翻译： PEB单元的热板被分成多个热板区域，并且可以为每个热板区域设置温度。 用于调节热板内的温度的温度校正值可针对热板的每个热板区域而设定。 测量光刻工艺已经完成的衬底内的线宽。 使用泽尔尼克多项式将测量的线宽的平面内趋势分解成多个平面内趋势分量。 然后，从计算出的多个面内趋势分量中提取通过设定温度校正值而可改善的面内倾向分量，并且将其相加以计算测量的线宽中的可改进的面内倾向。 然后，从当前处理状态的面内倾向Z中减去可改进的平面内趋势，以计算改进后的平面内趋势。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.024 秒)
